1. FEATURES
●
We declare that the material of product compliance with
RoHS requirements and Halogen Free.
●
S- prefix for automotive and other applications requiring
unique site and control change requirements; AEC-Q101
qualified and PPAP capable.
2. DEVICE MARKING AND ORDERING INFORMATION
3. MAXIMUM RATINGS(Ta = 25ºC)
– Continuous (Ta = 25°C)
– Pulsed Drain Current (tp ≤ 10 µs)
Total Power Dissipation @ TA = 25°C
Thermal Resistance,
Junction–to–Ambient
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
TJ,Tstg −55∼+150 ℃
TL 260 ℃
IDM 520
PD 380 mW
RΘJA 328 ℃/W
Drain Current mA
ID 130
Unit
Drain–Source Voltage VDSS 50 V
Gate–to–Source Voltage – Continuous VGS ±20 V
LBSS8402DW1T3G 402 10000/Tape&Reel
Parameter Symbol Limits
LBSS8402DW1T1G
S-LBSS8402DW1T1G
POWER MOSFET
Device Marking Shipping
LBSS8402DW1T1G 402 3000/Tape&Reel
SC88(SOT-363)
Leshan Radio Company, LTD. Rev.C Jun 2018 1/8
S
1
D
1
D
2
S
2
G
1
G
2
123
4 5 6
Junction and Storage temperature range
LBSS8402DW1T1G, S-LBSS8402DW1T1G
POWER MOSFET
4. ELECTRICAL CHARACTERISTICS (Ta= 25ºC )
N-Channel
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 250μA)
Zero Gate Voltage Drain Current
(VDS = 25 V, VGS = 0 V)
(VDS = 50 V, VGS = 0 V)
Gate–Source Leakage Current
(VGS = ± 20 V, VDS = 0 V)
ON CHARACTERISTICS (Note 1)
Gate–Source Threshold Voltage
(VDS = VGS , ID = 1.0 mA)
Static Drain–Source On–State Resistance
(VGS= 2.75 V, ID < 200 mA, TA = –40°C to +85°C)
(VGS = 5.0 V, ID = 200 mA)
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 V, VGS = 0, f = 1 MHz)
Output Capacitance
(VDS = 25 V, VGS = 0, f = 1 MHz)
Transfer Capacitance
(VDS = 25 V, VGS = 0, f = 1 MHz)
SWITCHING CHARACTERISTICS(Note 2)
-
ns
Turn-Off Delay Time td(off) - 7 -
Crss
pF
- 3 -
Turn-On Delay Time
(VDD = 30 V, ID =0.2A)
td(on) - 5
Ciss
pF
- 42 -
Coss
pF
- 15 -
RDS(on)
Ohm
- 5.6 10
- - 3.5
IGSS
μA
- - ±0.1
VGS(th)
V
0.5 - 1.5
- - 0.1
- - 0.5
VBRDSS
V
50 - -
IDSS
μA
Characteristic
Symbol Min. Typ. Max. Unit
Leshan Radio Company, LTD. Rev.C Jun 2018 2/8