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Application Note AN-2134
Modulating Finisar Oxide VCSELs
INTRODUCTION
In the last decade, proton isolated VCSELs have become the industry standard for short
wavelength (850nm) gigabit data communications links on multimode fiber. As the speeds have
increased beyond 2Gbps, however, the oxide isolated VCSEL is increasingly the preferred source.
While proton isolated VCSELs can serve this application, oxide isolated VCSELs have proven
easier to drive at the higher speeds. Many characteristics are independent of the isolation
technology, so the reader is referred to the Finisar VCSEL website at www.Finisar.com/vcsel for
general information on VCSEL characteristics. The present note augments that more general
information with specifics related to driving oxide isolated VCSELs at high bit rates. Generally, this
information relates to TO-can packaged and connectorized VCSELs operating at speeds up to
approximately three gigabits per second. A separate application note deals with operation at even
higher speeds [1].
Oxide VCSEL Equivalent Circuit Model
Packaging of VCSELs and monitor photodiodes requires attention to details in order to deal with
electrical parasitics. These parasitics, small as they may be, can dominate the performance through
their interaction with the laser-driver interface. For this reason, the most important design
consideration in building an optical transceiver is often the electrical interface to the VCSEL
package. This interface is not just the driver chip, but includes as important elements the details of
the board layout, parasitic capacitance or inductance of any passive elements incorporated in the
drive path, and the length of lead from the VCSEL package to the solder joint on the board. It is not
always intuitive how each of these elements affects the VCSEL performance. Subtle changes to
packaging can result in dramatic performance changes in optical characteristics; a fact that was
used to good effect in many proton VCSEL based designs.
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Many commercial laser drivers are available that interface to Finisar oxide isolated VCSELs. Each
of these laser drivers may require a different interface circuit or set of VCSEL driving conditions. It is
considered outside the scope of this application note to address designs with specific laser driver
manufacturers, though many of them offer design assistance using Finisar VCSELs. This
application note instead provides general guidance and characterization information for the Finisar
product. The electrical equivalent circuits described below were derived from S parameter
measurements of VCSELs in TO-style packages, and are intended to be a starting point for
modeling performance. The values are shown for above-threshold operation at room temperature;
some characteristics may change due to temperature and driving conditions. The reader is referred
to the application notes VCSEL Spice Model [2], Modulating VCSELs [3], and the product data
sheets [4] which are available on the Finisar VCSEL website for more detailed information on
variations of VCSEL characteristics with temperature. Like all models, the ones detailed below are
representative, but do provide useful design guidelines. The models are intended to characterize
the electrical interface to the VCSEL, so no attempt is made to model the optical output. Two
models are given, the Common Anode (HFE4x90-xxx), and Common Cathode (HFE4x91-xxx)
configurations. While these two configurations represent the bulk of Finisar production, other
configurations are possible. The parametric values shown in the models are typical. Most do not
vary much from device to device, with the exception of the package lead inductances, which are
dependent on the user-chosen lead lengths, and the parasitic capacitances from the monitor
photodiode to the VCSEL cathode and to the package header. In different designs these latter
values can vary substantially, but within any given design they are nearly constant. In the standard
configurations, the VCSEL and PD common lead is common to the case of the TO package.