PRELIMINARY
MSW2T-8512-740
SP2T SMT High Power X Band Shunt PIN Diode Switch
Features:
• Frequency Range: 8.5 GHZ to 12.0 GHz
• Package Dimensions: 9mm x 6mm x 2.5mm
• Power Handling (CW): 50 dBm
• Power Handling (Peak): 53 dBm
• Low Insertion Loss: 0.75 dB
• Return Loss: 17 dB
• Isolation: 35 dB
• High Bias Voltage supports High Linear it y
• RoHS Compliant
Description:
The MSW2T-8512-740 SMT High Power PIN Diode switch leverages a high reliability hybrid manufacturing
process which y i elds proven superior high power performance t o bot h MM IC and Glass Carri er based
technologies. The hybrid design approach permits precise PIN Diode selection to optimize RF perform ance
while maintaining competitive cost targets. The small form factor (9mm x 6m m x 2.5mm) offers effici ent
utilization of real estate while providin g world class power handling, low insertion loss, and high isolation relative
to all competing tech nol ogies.
Typical Applications:
• Radar T/R Modules
• Switch Bank Filters
• Mil-Com Radios
The MSW2T-8512-740 High Power SP2T switch is intended for us e in high power, high reliability, m ission
critical applicat i ons across the 8.5 GHz to 12.0 GHz Band frequen cy ranges. The manufacturing process has
been proven through years of extensive use in high reliability appl i cations.
ESD and Moisture Sensitivity Level Rating:
RFuW Engineering sales@rfuw-engineering.com
PRELIMINARY MSW2T-8512-740 Rev F
The MSW2T-8512-740 carries an ESD r at i ng of Class 1C, Human Body Model (HBM) and a moisture sensitivit y
rating of MSL 1. T he M SW2T-8512-740 SP2T switch is fully RoHS compliant.
MSW2T-8512-740 Specifications @ Zo = 50Ω; Ta = +25°C
Parameter Symbol Unit Test Conditions
Min
Value
Typical
Value
Max
Value
Frequency F GHz 8.5 12.0
J0-J1 or J0-J2
Insertion Loss
IL dB
-180V @ -50mA (ON)
+1V @ +25 mA (OFF)
0.75 0.90
J0-J1 or J0-J2
Return Loss
RL dB
-180V @ -50mA (ON)
+1V @ +25 mA (OFF)
15 17
J0-J1 or J0-J2
Isolation
ISO dB
-180V @ -50mA (ON)
+1V @ +25 mA (OFF)
30 35
CW Incident
Power
P inc
(CW)
dBm
-180V @ -50mA (ON)
+1V @ +25 mA (OFF)
1.5:1 Source & Load
VSWR
50
Peak Incident
Power
P inc (Pk) dBm
-180V @ -50mA (ON)
+1V @ +25 mA (OFF)
1.5:1 Source & Load
VSWR
53 @ 10
uS Pulse,
1% Duty
Switching Speed Ts ns
(10%-90%) RF Voltage
TTL rep rate = 100 kHz
1,000 1,250
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