MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
For capacitive load, derate current by 20%.
Single phase, half wave, 60Hz, resistive or inductive load.
Rating at 25
o
C
ambient temperature unless otherwise specified.
NOTES :
-55 to +150
SYMBOL
V
RRM
V
RMS
V
DC
IF
(AV)
I
FSM
V
F
I
R
Trr
C
J
T
J
, T
STG
200
140
200
400
280
400
600
420
600
10.0
10.0
100
1.3
1.7
0.98
35
250
65
2.2
UNIT
V
V
V
V
A
A
uA
uA
o
C
pF
o
CW
nS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Peak Forward Surge Current, 8.3ms single
Maximum Instantaneous Forward Voltage
Maximum DC Reverse Current @T
J
=25
o
C
Typical junction Capacitance (Note 2)
Operating Junction and Storage
Current T
C
=100
o
C
Half sine-wave superimposed on rated load
(JEDEC method)
@ 5.0 A
At Rated DC Blocking Voltage @T
J
=125
o
C
Maximum Reverse Recovery Time (Note 1)
Typical Thermal Resistance (Note 3)
Features
¬ Low forward voltage drop
¬ Fast switching for high efficiency
¬ High current capability
¬ Case:ITO-220AB Isolated/Insulated
¬ High surge current capability
¬ Weight: 2.2 gram approximately
¬ Polarity:As marked on diode body
method 208
¬ Mounting position: Any
¬ Terminals: Solderable per MIL-STD-202
Mechanical Data
¬ Low reverse leakage current
R
JC
Temperature Range
(1) Reverse recovery test conditions I
F
= 0.5A, I
R
= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
¬ Epoxy: UL 94V-0 rate flame retardant
Unit : inch (mm)
®
MURF1020CTR thru MURF1060CTR
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
Page 1/2
Pb Free Plating Product
MURF1020CTR thru MURF1060CTR
Pb
10.0 Ampere Insulated Common Anode Ultra Fast Recovery Rectifier
Positive
Negative
Doubler
Common Cathode
Case
Case
Case
Common Anode
Suffix "CTR"
Suffix "CTD"
Suffix "CT"
MURF1020CT
MURF1020CTR
MURF1020CTD
MURF1040CT
MURF1040CTR
MURF1040CTD
ITO-220AB
.189(4.8)
.406(10.3)
.130(3.3)
.114(2.9)
.071(1.8)
.055(1.4)
.035(0.9)
.011(0.3)
(2.55) (2.55)
.1 .1
.032(.8)
.112(2.85)
.272(6.9)
.606(15.4)
.543(13.8)
.161(4.1)MAX
.134(3.4)
.165(4.2)
.381(9.7)
.114(2.9)
.098(2.5)
.055(1.4)
.039(1.0)
MAX
.100(2.55)
.248(6.3)
.583(14.8)
.512(13.0)
.118(3.0)
MURF1060CT
MURF1060CTR
MURF1060CTD
FIG.1 - FORWARD CURRENT DERATING CURVE
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
10
6
4
2
8
IINSTANTANEOUS FORWARD CURRENT,
AMPERES
1
10
100
0.1
0.40.2 0.6 0.8 1.0 1.2 1.4 1.6
0
0 50 100 150
CASE TEMPERATURE,
o
C
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT,
AMPERES
NUMBER OF CYCLES AT 60Hz
0
20
40
60
80
100
1 10 100
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
0.1
0
1
10
1000
100
20 40 60 80 100
FIG.5 - TYPICAL JUNCTION CAPACITANCE
REVERSE VOLTAGE, VOLTS
0.1
10
JUNCTION CAPACITANCE, pF
1000
1.0 4.0 10 100
100
60 Hz Resistive or
Inductive load
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
T
J
=25
o
C
PULSE WIDTH=300uS
1% DUTY CYCLE
T
J
=125
o
C
T
J
=25
o
C
T
J
= 25
o
C
f = 1.0 MHZ
Vsig = 50mVp-p
MURF1020CTR
MURF1040CTR
MURF1060CTR
®
MURF1020CTR thru MURF1060CTR
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
Page 2/2