MMDT3906V
Document number: DS30467 Rev. 9 - 3
1 of 5
www.diodes.com
May 2009
© Diodes Incorporated
MMDT3906V
NOT RECOMMENDE D
FOR NEW DESIGNS
USE MMDT3906VC
DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Ideal for Low Power Amplification and Sw
itching
•
Ultra-Small Surfac
e Mount Package
• Lead Free By Design/RoHS Compliant (Note 1)
• Qualified to AEC-Q101 Standards for High Reliability
• "Green" Device (Notes 4 and 5)
Mechanical Data
• Case: SOT-563
• Case Material: Molded Plastic, “Green” Molding Co
mpound.
(
Note 5) UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminal Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe.
Solderable per M
IL-STD-202, Method 20
• Terminals: Lead bearing terminal plating available.
See
Ordering information Page 3
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.003 grams (approximate)
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
-40 V
Collector-Emitter Voltage
V
CEO
-40 V
Emitter-Base Voltage
V
EBO
-5.0 V
Collector Current - Continuous
I
C
-200 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ T
A
= 25
o
C P
D
150 mW
Thermal Resistance, Junction to Ambient (Note 3) @ T
A
= 25
o
C
R
θ
JA
833
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Notes: 1. No purposefully added lead.
2. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, wh
ich
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4.
Diodes Inc.'s "G reen" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
Top View
Bottom View Device Schematic
C
1
B
2
E
2
C
2
E
1
B
1
MMDT3906V
Document number: DS30467 Rev. 9 - 3
2 of 5
www.diodes.com
May 2009
© Diodes Incorporated
MMDT3906V
NOT RECOMMENDE D
FOR NEW DESIGNS
USE MMDT3906VC
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
V
(
BR
)
CBO
-40
⎯
V
I
C
= -10μA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(
BR
)
CEO
-40
⎯
V
I
C
= -1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(
BR
)
EBO
-5.0
⎯
V
I
E
= -10μA, I
C
= 0
Collector Cutoff Current
I
CEX
⎯
-50 nA
V
CE
= -30V, V
EB
(
OFF
)
= -3.0V
Base Cutoff Current
I
BL
⎯
-50 nA
V
CE
= -30V, V
EB
(
OFF
)
= -3.0V
ON CHARACTERISTICS (Note 6)
DC Current Gain
h
FE
60
80
100
60
30
⎯
⎯
300
⎯
⎯
⎯
I
C
= -100µA, V
CE
= -1.0V
I
C
= -1.0mA, V
CE
= -1.0V
I
C
= -10mA, V
CE
= -1.0V
I
C
= -50mA, V
CE
= -1.0V
I
C
= -100mA, V
CE
= -1.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯
-0.25
-0.40
V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
Base-Emitter Saturation Voltage
V
BE(SAT)
-0.65
⎯
-0.85
-0.95
V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
⎯
4.5 pF
V
CB
= -5.0V, f = 1.0MHz, I
E
= 0
Input Capacitance
C
ibo
⎯
10 pF
V
EB
= -0.5V, f = 1.0MHz, I
C
= 0
Input Impedance
h
ie
2.0 12
kΩ
V
CE
= 10V, I
C
= 1.0mA,
f = 1.0kHz
Voltage Feedback Ratio
h
re
0.1 10 x 10
-4
Small Signal Current Gain
h
fe
100 400
⎯
Output Admittance
h
oe
3.0 60
μS
Current Gain-Bandwidth Product
f
T
250
⎯
MHz
V
CE
= -20V, I
C
= -10mA,
f = 100MHz
Noise Figure NF
⎯
4.0 dB
V
CE
= -5.0V, I
C
= -100μA,
R
S
= 1.0kΩ,
f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time
t
d
⎯
35 ns
V
CC
= -3.0V, I
C
= -10mA,
V
BE
(
off
)
= 0.5V, I
B1
= -1.0mA
Rise Time
t
r
⎯
35 ns
Storage Time
t
s
⎯
225 ns
V
CC
= -3.0V, I
C
= -10mA,
I
B1
= I
B2
= -1.0mA
Fall Time
t
f
⎯
75 ns
Notes: 6. Short duration pulse test used to minimize self-heating effect.
-50
050100150
250
200
150
50
100
0
T , AMBIENT TEMPERA TURE ( C)
Fig. 1 Power Dissipation
vs . Ambient Te m per at ur e (Note 3)
A
°
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N
(mW)
D
1
10
1,000
100
0.1
1
10
1,000
100
h, D
C
C
U
R
R
EN
T
G
AIN
FE
I , COLLECTOR CURRENT (mA)
Fig. 2 T y pica l DC Current Gain vs. Collector Current
C