GS66502B
Bottom-side cooled 650 V E-mode GaN transistor
Preliminary Datasheet
Rev 181214
© 2009-2018 GaN Systems Inc.
1
This information pertains to a product under development. Its characteristics and specifications are subject to change without notice.
Submit datasheet feedback
Circuit Symbol
Package Outline
Features
• 650 V enhancement mode power switch
• Bottom-side cooled configuration
• R
DS(on)
= 200 mΩ
• I
DS(max)
= 7.5 A
• Ultra-low FOM Island Technology® die
• Low inductance GaN
PX® package
• Easy gate drive requirements (0 V to 6 V)
• Transient tolerant gate drive (-20 V / +10 V)
• Very high switching frequency (> 100 MHz)
• Fast and controllable fall and rise times
• Reverse current capability
• Zero reverse recovery loss
• Small 5.0 x 6.6 mm
2
PCB footprint
• RoHS 6 compliant
Applications
• High efficiency power conversion
• High density power conversion
• AC-DC Converters
• Bridgeless Totem Pole PFC
• ZVS Phase Shifted Full Bridge
• Half Bridge topologies
• Synchronous Buck or Boost
• Small-Medium UPS
• Appliance Motor Drives
• Single phase inverter legs
• Fast Battery Charging
• Class D Audio amplifiers
• DC-DC converters
Description
The GS66502B is an enhancement mode GaN-on-
silicon power transistor. The properties of GaN
allow for high current, high voltage breakdown
and
high switching frequency. GaN Systems
implements patented Island Technology® cell
layout for high-current die performance & yield.
GaN
PX® packaging enables low inductance & low
thermal resistance in a small package
. The
GS66502B is a bottom-side cooled transistor that
offers very low junction-to-case thermal resistance
for demanding high power applications. These
features combine to provide very high efficiency
power switching.
GS66502B
Bottom-side cooled 650 V E-mode GaN transistor
Preliminary Datasheet
Rev 181214
© 2009-2018 GaN Systems Inc.
2
This information pertains to a product under development. Its characteristics and specifications are subject to change without notice.
Submit datasheet feedback
Absolute Maximum Ratings (T
case
= 25 °C except as noted)
Parameter Symbol Value Unit
Operating Junction Temperature T
J
-55 to +150 °C
Storage Temperature Range T
S
-55 to +150 °C
Drain-to-Source Voltage V
DS
650 V
Drain-to-Source Voltage - transient (note 1) V
DS(transient)
750 V
Gate-to-Source Voltage V
GS
-10 to +7 V
Gate-to-Source Voltage - transient (note 1) V
GS(transient)
-20 to +10 V
Continuous Drain Current (T
case
= 25 °C) (note 2) I
DS
7.5 A
Continuous Drain Current (T
case
= 100 °C) (note 2) I
DS
6.3 A
Pulse Drain Current (Pulse width 100 µs) I
DS Pulse
18 A
(1) Pulse < 1 µs
(2) Limited by saturation
Thermal Characteristics (Typical values unless otherwise noted)
Parameter Symbol Value Units
Thermal Resistance (junction-to-case) – bottom side R
ΘJC
2 °C /W
Thermal Resistance (junction-to-top) R
ΘJT
28 °C /W
Thermal Resistance (junction-to-ambient) (note 3) R
ΘJA
31 °C /W
Maximum Soldering Temperature (MSL3 rated) T
SOLD
260 °C
(3) Device mounted on 1.6 mm PCB thickness FR4, 4-layer PCB with 2 oz. copper on each layer. The recommendation for
thermal vias under the thermal pad are 0.3 mm diameter (12 mil) with 0.635 mm pitch (25 mil). The copper layers under
the thermal pad and drain pad are 25 x 25 mm
2
each. The PCB is mounted in horizontal position without air stream
cooling.
Ordering Information
Ordering
code
Package type
Packing
method
Qty
Reel
Diameter
Reel
Width
GS66502B-TR GaNPX® Bottom-Side Cooled Tape-and-Reel 3000 13” (330mm) 16mm
GS66502B-MR GaNPX® Bottom-Side Cooled Mini-Reel 250 7” (180mm) 16mm