■FEATURES ■PACKAGE
* Schottky Barrier Chip
* Guard Ring Die Construction for
Transient Protection
* Low Power Loss,High Effciency
* High Surge Capability
* High Current Capability and Low
Forward Voltage Drop
1、ANODE
* For Use in Low Voltage,High Frequency
2、CATHODE
Inverters,Free Wheeling,and Polarity
3、ANODE
Protection Applications
■ELECTRICAL CHARACTERISTICS (Tamb=25℃)
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage V
RRM
100 VWorking Peak Reverse Voltage V
RWM
DC Blocking Voltage V
R
Average Rectifide Output Current
I
F(per leg)
10
A
I
F(Total)
20
Non-Repetitive Peak Surge Current
(Surge applied at rated load conditions
halfwave,single phase,60H
Z
)
I
FSM
200 A
Maximum Instaneous Forward Voltage
V
F
V @IF=10A,TC=25℃ 0.85
@IF=10A,TC=125℃ 0.75
Peak Reverse Current @Tc=25 ℃
I
R
0.1
mA
at Rated DC Blocking Voltage @Tc=125℃ 6
Operating and Storage Temperature Range T
J
, T
STG
-65 to +150 ℃
Maximum Thermal Resistance
θ
JC
2
℃/W
θ
JA
60
MBR20100LCT
Page 1 of 4
BrightMoon Semiconductor Co.,Ltd.
Http://www.bmsemi.com
Tel: 0755-86531933 Fax: 0755-86531633
