Silicon Epitaxial Planar Switching Diode
Fast switching diode in MiniMELF case especially suited
for automatic surface mounting
Absolute Maximum Ratings (T
a
= 25℃)
Parameter
Symbol Value Unit
Peak Reverse Voltage
V
RM
100 V
Reverse Voltage
V
R
75 V
Average Rectified Forward Current
I
F(AV)
200 mA
Non-repetitive Peak Forward Surge Current at t = 1 s
at t = 1 ms
at t = 1 μs
I
FSM
0.5
1
4
A
Power Dissipation
P
tot
500
1)
mW
Junction Temperature
T
j
175
℃
Storage Temperature Range
T
stg
- 65 to + 175
℃
1)
Valid provided that electrodes are kept at ambient temperature.
LL-34
LL4148
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Bright Moon Semiconductor Co.,Ltd.
Http://www.bmsemi.com
Tel: 0755-86531933 Fax: 0755-86531633
Characteristics at T
a
= 25℃
Parameter Symbol Min. Max. Unit
Reverse Breakdown Voltage
tested with 100 µA Pulses
V
(BR)R
100 - V
Forward Voltage
at I
F
= 10 mA
V
F
- 1 V
Leakage Current
at V
R
= 20 V
at V
R
= 75 V
at V
R
= 20 V, T
j
= 150℃
I
R
I
R
I
R
-
-
-
25
5
50
nA
µA
µA
Capacitance
at V
R
= 0, f = 1 MHz
C
tot
- 4 pF
Voltage Rise when Switching ON
tested with 50 mA Forward Pulses
tp = 0.1 s, Rise Time < 30 ns, fp = 5 to 100 KHz
V
fr
- 2.5 V
Reverse Recovery Time
at I
F
= 10 mA to I
R
= 1 mA, Irr = 0.1 x I
R
,V
R
= 6 V,
R
L
= 100 Ω
t
rr
- 4 ns
Thermal Resistance Junction to Ambient Air
R
thA
- 0.35
1)
K/mW
Rectification Efficiency
at f = 100 MHz, V
RF
= 2 V
η
V
0.45 - -
1)
Valid provided that electrodes are kept at ambient temperature.
~
~
~
2
n
F
5
K
Rectification Efficiency M easurem en t Circuit
6
0
V
R
F
=
2
V
V
o
Page 2 of 3
Bright Moon Semiconductor Co.,Ltd.
Http://www.bmsemi.com
Tel: 0755-86531933 Fax: 0755-86531633
LL4148