PAGE . 1
September 2,2019-REV.04
PJSD03TS-AU~PJSD36TS-AU
VOLTAGE
POWER3~36 Volt
120 Watt
SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS
• 120 Watts peak pules power( tp=8/20μs)
• Small package for use in portable electronics
• Suitable replacement for MLV’S in ESD protection applications
• Low clamping voltage and leakage current
• AEC-Q101 qualified
• Lead free in compliance with EU RoHS 2.0
• Green molding compound as per IEC 61249 standard
MAXIMUM RATINGS AND ELECTRICAL CHATACTERISTICS
• Case: SOD-523 plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
• Approx Weight: 0.00005 ounces, 0.0014 grams
• Marking : PJSD03TS-AU : KD
PJSD05TS-AU : KE
PJSD07TS-AU : KF
PJSD08TS-AU : KR
PJSD12TS-AU : LE
PJSD15TS-AU : LM
PJSD24TS-AU : LZ
PJSD36TS-AU : MP
APPLICATIONS
FEA TURES
ABSOLUTE MAXIMUM RATING
Rating Symbol Value Units
Peak Pulse Power Dissipation (tp=8/20 μs) P
PP
120 W
ESD Voltage V
ESD
25 KV
Operating Temperature T
J
-50 to +150
O
C
Storage Temperature T
STG
-50 to +150
O
C
PJSD03TS-AU
Parameter Symbol Conditions Min. Typical Max. Units
Reverse Stand-Off Voltage V
RWM
---3.3V
Reverse Breakdown Voltage V
BR
I
BR
=1mA 4 - - V
Reverse Leakage Current I
R
V
R
=3.3V - - 200
μA
Clamping Voltage(8/20μs) V
C
I
PP
=5A - - 6.5 V
Off State Junction Capacitance C
J
0Vdc Bias=f=1MHz - - 200 pF
Off State Junction Capacitance C
J
3.3Vdc Bias=f=1MHz - - 100 pF
1
2
Cathode
Anode
ELECTRICAL CHATACTERISTICS
0.20 MIN.
0.034(0.85)
0.029(0.75)
0.014(0.35)
0.009(0.25)
0.006(0.15)
0.002(0.05)
0.026(0.65)
0.021(0.55)
0.067(1.70)
0.059(1.50)
0.050(1.25)
0.045(1.15)
PAGE . 2
PJSD03TS-AU~PJSD36TS-AU
PJSD05TS-AU
Parameter Symbol Conditions Min. Typical Max. Units
Reverse Stand-Off Voltage V
RWM
---5V
Reverse Breakdown Voltage V
BR
I
BR
=1mA 6.0 - - V
Reverse Leakage Current I
R
V
R
=5V - - 5
μA
Clamping Voltage(8/20μs) V
C
I
PP
=5A - - 9 V
Off State Junction Capacitance C
J
0Vdc Bias=f=1MHz - - 110 pF
Off State Junction Capacitance C
J
5Vdc Bias=f=1MHz - - 60 pF
PJSD07TS-AU
Parameter Symbol Conditions Min. Typical Max. Units
Reverse Stand-Off Voltage V
RWM
---7.0V
Reverse Breakdown Voltage V
BR
I
BR
=1mA 7.5 - - V
Reverse Leakage Current I
R
V
R
=7V - - 150 nA
Clamping Voltage(8/20μs) V
C
I
PP
=8.8A - - 22.7 V
Off State Junction Capacitance C
J
0Vdc Bias=f=1MHz - - 85 pF
PJSD08TS-AU
Parameter Symbol Condit ions Min. Typical Max. Units
Reverse Stand-Off Voltage V
RWM
---8V
Reverse Breakdown Voltage V
BR
I
BR
=1mA 8.5 - - V
Reverse Leakage Current I
R
V
R
=8V - - 5
μA
Clamping Voltage(8/20μs) V
C
I
PP
=5A - - 13 V
Off State Junction Capacitance C
J
0Vdc Bias=f=1MHz - - 70 pF
PJSD12TS-AU
Parameter Symbol Conditions Min. Typical Max. Units
Reverse Stand-Off Voltage V
RWM
---12V
Reverse Breakdown Voltage V
BR
I
BR
=1mA 13.3 - - V
Reverse Leakage Current I
R
V
R
=12V - - 5
μA
Clamping Voltage(8/20μs) V
C
I
PP
=5A - - 17 V
Off State Junction Capacitance C
J
0Vdc Bias=f=1MHz - - 60 pF
September 2,2019-REV.04