SMD Schottky Barrier Rectifiers
Reverse Voltage: 20 to 200 Volts
Forward Current: 3.0 Amp
RoHS Device
Page 1
REV:A
Features
Mechanical data
SS32B-HF Thru. SS320B-HF
Maximum Ratings and Electrical Characteristics
Comchip Technology CO., LTD.
Halogen Free
Company reserves the right to improve product design , functions and reliability without notice.
• Metal silicon junction, majority carrier conduction
• For surface mounted applications
• Low power loss, high efficiency
• High forward surge current capability
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
• Case: SMB
• Terminals: Solderable per MIL-STD-750, Method 2026
• 95mg / 0.0034ozApprox. Weight:
Measured at 1 MHz and applied reverse voltage of 4 V D.C
（2）
（1）
P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
SP-JB017
Dimensions in inches and (millimeter)
DO-214AA (SMB)
0.126 (3.20)
0.078 (1.99)
0.087 (2.20)
0.071 (1.80)
0.157 (4.00)
0.130 (3.30)
0.191 (4.85)
0.157 (4.00)
0.012 (0.31)
MAX.
0.220 (5.60)
0.197 (5.00)
0.063 (1.60)
0.028 (0.70)
0.008(0.21)
MAX.
Maximum DC Blocking Voltage
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS voltage
Maximum Average Forward Rectified Current
20
40
V
14
28
V
V
3.0
0.5
5
-55 ~ +150
A
A
V
mA
°C
Units
20 40
Peak Forward Surge Current,8.3ms
Single Half Sine-wave Superimposed
on Rated Load (JEDEC method)
Max Instantaneous Forward Voltage at 3 A
Maximum DC Reverse Current
at Rated DC Reverse Voltage
Operating Junction Temperature Range
SS32B SS34B SS36B SS38B SS310B SS312B SS315B SS320B
T = 25°C
a
T =100°C
a
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
T
j
Symbols
T
stg
Storage Temperature Range
60
42
60
80
56
80
100
100
0.55 0.70 0.85
-55 ~ +150
°C
120
120
150
105
150
200
140
200
0.95
0.3
3
80
70 84
60
Typical Thermal Resistance
°C/W
R
θJA
Typical Junction Capacitance
pF
C
j
450 400
（1）
（2）
Ratings at ambient temperature unless otherwise specified.Single phase, half wave,
25 °C
60Hz resistive or inductive load, for capacitive load, derate by 20 %
RATING AND CHARACTERISTIC CURVES (SS32B-HF Thru. SS320B-HF)
Comchip Technology CO., LTD.
Page 2
SMD Schottky Barrier Rectifiers
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
SP-JB017
0.1
0
0.4 1.4
Fig.3 Typical Forward Characteristic
Instaneous Forward Current (A)
Instaneous Forward Voltage (V)
1.0
10
0.60.2 0.8 1.0 1.2 1.81.6
20V/40V
60V/80V
100V/120V
150V/200V
20
10 1001
30
40
50
20
60
80
70
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
Peak A)Forward Surage Current (
Number of Cycles at 60Hz
Fig.2 Typical Reverse Characteristics
Instaneous Current ( μA)Reverse
20 40 60 80
0
T =25
J
°C
T =100
J
°C
Percent of Rated Peak Reverse Voltage（%）
100
10
0
10
1
10
2
10
3
10
4
T =75
J
°C
20V~60V
80V~200V
0.6
1.2
1.8
2.4
3.0
3.5
0.0
25 50
75
100 125 150
Fig.1 Forward Current Derating Curve
Average Forward Current (A)
0.01
100
1
10
100
Fig.6- Typical Transient Thermal Impedance
Transient Thermal Impedance（ /W）°C
t, Pulse Duration（sec）
0.1 1 10
Lead Temperature (°C)
Fig.4 Typical Junction Capacitance
JunctionCapacitance ( pF)
Reverse Voltage (V)
10
0.1 10
100
500
20
1001
1000
T =25
J
°C
200
20V~60V
80V~200V
90
8.3 ms Single Half Sine Wave
(JEDEC Method)