- 1-
S T - 1 M L A・S T - 1 M L B
Photo transistors
K O D E N S H I
The ST-1MLA and 1MLB are high-sensitivity NPN
silicon phototransistors mounted in TO-18 Type
header with clear epoxy encapsulation. The
phototransistors have a wide angular response and
relatively low-cost compared to TO-18 can type
d e v i c e s .
F E A T U R E S
•Wide angular response
•Relatively low-cost against metal can package
•Low profile package
•Two leads (Collector, Emitter) ST-1MLA
•Three leads (Collector, Emitter, Base) ST-1MLB
A P P L I C A T I O N S
•Optical counters
•Infrared sensors
•Camera stroboscopes
D I M E N S I O N S
(Unit : mm)
R a t i n gS y m b o lI t e m
MAXIMUM RATINGS
C-E voltage
E-C voltage
Collector current
Collector power dissipation
Operating temp.
Storage Temp.
Soldering temp.
* 1
V
C E O
V
E C O
I
C
P
C
T o p r .
T s t g .
T s o l .
4 0
4
3 0
1 0 0
- 2 5 ~ + 9 0
- 3 0 ~ + 1 0 0
2 6 0
V
V
m A
m W
℃
℃
℃
U n i t
( T a = 2 5℃)
5 0 0 ~ 1 , 0 5 0
( T a = 2 5℃)
ELECTRO-OPTICAL CHARACTERISTICS
V
C E O
= 1 0 V
V
C E
=10V, 200lx
* 2
I
C
=2mA, 2,000lx
* 2
V
C C
=10V, I
C
= 5 m A ,
R
L
= 1 0 0Ω
I t e m T y p .
1
2 . 0
0 . 2
8
1 0
8 8 0
±7 0
Collector dark current
Light current
C-E saturation voltage
Switching speeds
Rise time
Fall time
Spectral sensitivity
Peak wavelength
Half anglee
I
C E O
I
L
V
C E
( s a t )
t r
t f
λ
λp
△θ
0 . 5
2 0 0
5 . 0
0 . 4
n A
m A
V
μs e c .
μs e c .
n m
n m
d e g .
S y m b o l C o n d i t i o n s M i n . M a x . U n i t .
*2. Color temp.=2856K standard Tungsten lamp
*1. For MAX.5 seconds at the position of 2 mm from the package
ST-1MLBST-1MLA
- 2-
S T - 1 M L A・S T - 1 M L B
Photo transistors
Collector current Vs.
Collector - Emitter voltage
Collector current Vs.
Illuminance
Dark current Vs.
Ambient temperature
Relative sensitivity Vs.
Wavelength
Swithing time vs.
Load resistance
Radiant Pattern
Collector power dissipation Vs.
Ambient temperature