10-FY12S2A075SH-L860L48
datasheet
28 Aug. 2019 / Revision 1 2 Copyright Vincotech
Maximum Ratings
T
j = 25 °C, unless otherwise specified
Parameter Symbol Condition Value Unit
Boost Diode
Peak repetitive reverse voltage
V
RRM
1200 V
Continuous (direct) forward current
I
F
T
j
= T
jmax
T
s
= 80 °C
28 A
Repetitive peak forward current
I
FRM
92 A
Total power dissipation
P
tot
T
j
= T
jmax
T
s
= 80 °C
87 W
Maximum junction temperature
T
jmax
175 °C
Boost Sw. Protection Diode
Peak repetitive reverse voltage
V
RRM
1600 V
Continuous (direct) forward current
I
F
T
j
= T
jmax
T
s
= 80 °C
25 A
Surge (non-repetitive) forward current
I
FSM
50 Hz Single Half Sine Wave
T
j
= 150 °C
200 A
Surge current capability
I
2
t
t
p
= 10 ms
200 A
2
s
Total power dissipation
P
tot
T
j
= T
jmax
T
s
= 80 °C
37 W
Maximum junction temperature
T
jmax
150 °C
ByPass Diode
Peak repetitive reverse voltage
V
RRM
1600 V
Continuous (direct) forward current
I
F
T
j
= T
jmax
T
s
= 80 °C
38 A
Surge (non-repetitive) forward current
I
FSM
50 Hz Single Half Sine Wave
T
j
= 150 °C
270 A
Surge current capability
I
2
t
t
p
= 10 ms
370 A
2
s
Total power dissipation
P
tot
T
j
= T
jmax
T
s
= 80 °C
47 W
Maximum junction temperature
T
jmax
150 °C