10-FY12S2A075SH-L860L48
datasheet
28 Aug. 2019 / Revision 1 1 Copyright Vincotech
Maximum Ratings
T
j = 25 °C, unless otherwise specified
Parameter Symbol Condition Value Unit
flowBOOST 1 symmetric dual
1200 V / 75 A
Features flow 1 12 mm housing
● Symmetric Boost for 1500Vdc applications
● Latest IGBT technology for high speed frequencies
● Low inductance package
● Integrated NTC
● Cost effective alternative to L869L08
● Same package and pin-out as L869L08
Schematic
Target applications
● Solar Inverters
Types
● 10-FY12S2A075SH-L860L48
Boost Switch
Collector-emitter voltage
V
CES
1200 V
Collector current
I
C
T
j
= T
jmax
T
s
= 80 °C
60 A
Repetitive peak collector current
I
CRM
t
p
limited by T
jmax
225 A
Total power dissipation
P
tot
T
j
= T
jmax
T
s
= 80 °C
141 W
Gate-emitter voltage
V
GES
±20 V
Short circuit ratings
t
SC
V
GE
= 15 V V
cc
= 800 V T
j
= 150 °C
10 µs
Maximum junction temperature
T
jmax
175 °C
10-FY12S2A075SH-L860L48
datasheet
28 Aug. 2019 / Revision 1 2 Copyright Vincotech
Maximum Ratings
T
j = 25 °C, unless otherwise specified
Parameter Symbol Condition Value Unit
Boost Diode
Peak repetitive reverse voltage
V
RRM
1200 V
Continuous (direct) forward current
I
F
T
j
= T
jmax
T
s
= 80 °C
28 A
Repetitive peak forward current
I
FRM
92 A
Total power dissipation
P
tot
T
j
= T
jmax
T
s
= 80 °C
87 W
Maximum junction temperature
T
jmax
175 °C
Boost Sw. Protection Diode
Peak repetitive reverse voltage
V
RRM
1600 V
Continuous (direct) forward current
I
F
T
j
= T
jmax
T
s
= 80 °C
25 A
Surge (non-repetitive) forward current
I
FSM
50 Hz Single Half Sine Wave
T
j
= 150 °C
200 A
Surge current capability
I
2
t
t
p
= 10 ms
200 A
2
s
Total power dissipation
P
tot
T
j
= T
jmax
T
s
= 80 °C
37 W
Maximum junction temperature
T
jmax
150 °C
ByPass Diode
Peak repetitive reverse voltage
V
RRM
1600 V
Continuous (direct) forward current
I
F
T
j
= T
jmax
T
s
= 80 °C
38 A
Surge (non-repetitive) forward current
I
FSM
50 Hz Single Half Sine Wave
T
j
= 150 °C
270 A
Surge current capability
I
2
t
t
p
= 10 ms
370 A
2
s
Total power dissipation
P
tot
T
j
= T
jmax
T
s
= 80 °C
47 W
Maximum junction temperature
T
jmax
150 °C