Au HD6
Gold Bonding Wire for Fine Pitch and Low Loop
These highly doped wires of different
chemical compositions are very suit-
able for low and long loop applica-
tions. Both wire types are comparable
in their characteristics and offer
outstanding material and processing
properties as well as good high
temperature strength.
They represent an excellent bridge
between doped and alloyed wires.
Areas of application
Flat integrated circuits
(BGA, MQFP, CQP, TSOP,
TQFP, VSSOP, IC-cards,…)
COB, foil frames
Au HD6 Benefits
Low and long loop wire type
Soft type bonding wire of high ductility
Exact loop guiding
Mid strength type
Well proven loop stiffness and
thermal stability
Suitable for all high performance
bonding machines
For normal and high speed assembling
5.0
Au HD6 Type
ø 50 µm
ø 38 µm
ø 32 µm
ø 25 µm
ø 22 µm
ø 20 µm
ø 17.5 µm
ø 15.0 µm
60.0
50.0
40.0
30.0
20.0
10.0
0.0
Breaking Load vs. Elongation
Elongation (%)
Breaking Load (cN)
15.0
0.0 20.0
10.0
Diameter Microns (µm) 17.5 20 23 25 30 33 38 50
Mils 0.7 0.8 0.9 1.0 1.2 1.3 1.5 2.0
Elongation % 2 –5 2 –5 2 –8 2 –8 2 –8 2 –8 3 –8 3 – 10
Breaking Load cN > 5 > 6 > 7 > 9 > 14 > 16 > 20 > 35
For other diameters, please contact Heraeus Bonding Wires sales representative.
Recommended Technical Data of Au HD6
40
30
20
10
0
High Temperature Strength (HTS)
Breaking Load (µm)
Breaking Load (cN) Elongation (%)
25 32 50
Superior Reliability
Widest Bonding Highest Looping
Window Performance
Gold Wire Segmentation by Properties
Superior Reliability
Widest Bonding Highest Looping
Window Performance
Superior Reliability
Electrical Performance
Widest Bonding Highest Looping
Window Performance
High
Average
Sensitive pad
structure
High Loop / Low Loop
100
90
80
70
60
50
40
30
20
10
0
Heat Affected Zone (HAZ)
Wire diameter (mil)
Length of HAZ (µm)
0.8 1.0 1.2
38
0%
4%
8%
FAB diameter
0.8 mil x 1.65
1.0 mil x 1.49
1.2 mil x 1.75
HD6 Characteristics for 25 µm diameter
Non-Gold Elements < 100 ppm
Elastic Modulus > 70 GPa
Heat Affected Zone (HAZ) 80 – 120 µm
Melting Point 1063 °C
Density 19.32 g / cm³
Heat Conductivity 3.12 W / cm
.
K
Electrical Resistivity 2.3 µΩ-cm
Coeff. of Linear Expansion (20 – 100 °C) 14.2 ppm / K
Fusing Current for 25 µm, dia 10 mm length (in air) 0.365 A
N, Layout: HET14021-0516-1
The data given here is valid. We reserve the right to make technical alterations.
Heraeus Electronics
Heraeus Deutschland GmbH & Co. KG
Heraeusstraße 12-14
63450 Hanau, Germany
www.heraeus-electronics.com
Americas
Phone +1 610 825 6050
electronics.americas@heraeus.com
Asia Pacific
Phone +65 6571 7677
electronics.apac@heraeus.com
China
Phone +86 21 3357 5457
electronics.china@heraeus.com
Europe, Middle East and Africa
Phone +49 6181 35 3069
+49 6181 35 3627
electronics.emea@heraeus.com
The descriptions and engineering data shown here have been compiled by Heraeus using commonly-accepted procedures, in conjunction with modern testing equipment, and have been compiled as according to the latest factual knowledge in our
possession. The information was up-to date on the date this document was printed (latest versions can always be supplied upon request). Although the data is considered accurate, we cannot guarantee accuracy, the results obtained from its use, or
any patent infringement resulting from its use (unless this is contractually and explicitly agreed in writing, in advance). The data is supplied on the condition that the user shall conduct tests to determine materials suitability for particular application.