Features
R
DS(ON)
= 0.022 ohm
I
D
= 50A
BV
DSS
= 60V
●
●
●
▲
{
{
{
◀
●
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▲
{
{
{
◀
2. Drain
3. Source
1. Gate
Pb Free Plating Product
P50N06C
Pb
50A,60V Heatsink Planar N-Channel Power MOSFET
General Description
This N-channel enhancement mode field-effect power transistor
using THINKI Semiconductor advanced planar stripe, DMOS technol-
ogy intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged
avalanche characteristics. The TO-220M-SQ pkg is well suited for
adaptor power units,amplifiers,inverters and SMPS application.
TO-220M-SQ
1
2
3
• 50A, 60V, R
DS(on)
= 0.022Ω @V
GS
= 10 V
• Low gate charge ( typical 31 nC)
• Low Crss ( typical 65 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
Absolute Maximum Ratings T
C
= 25°C unless otherwise noted
Thermal Characte ristics
V
DSS
Drain-Source Voltage 60 V
I
D
Drain Current
- Continuous (T
C
= 25°C)
50 A
- Continuous (T
C
= 100°C)
35.4 A
I
DM
Drain Current - Pulsed
(Note 1)
200 A
V
GSS
Gate-Source Voltage ± 25 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
490 mJ
I
AR
Avalanche Current
(Note 1)
50 A
E
AR
Repetitive Avalanche Energy
(Note 1)
12 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
7.0 V/ns
P
D
Power Dissipation (T
C
= 25°C)
120 W
- Derate above 25°C 0.8 W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +175 °C
T
L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C
Symbol Parameter Typ Max Units
R
θJC
Thermal Resistance, Junction-to-Case -- 1.24 °C/W
R
θCS
Thermal Resistance, Case-to-Sink 0.5 -- °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W
Symbol Parameter P50N06C Units
P50N06C
© 2006 Thinki Semiconductor Co., Ltd.
http://www.thinkisemi.com/
Page 1/6
Rev.08C
Electrical Characteristics T
C
= 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 230µH, I
AS
= 50A, V
DD
= 25V, R
G
= 25 Ω, Starting T
J
= 25°C
3. I
SD
≤ 50A, di/dt ≤ 300A/µs, V
DD
≤ BV
DSS,
Starting T
J
= 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Symbol Parame ter Test Co nditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 µA
60 -- -- V
∆BV
DSS
/ ∆T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 µA, Referenced to 25°C
-- 0.06 -- V/°C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 60 V, V
GS
= 0 V
-- -- 1 µA
V
DS
= 48 V, T
C
= 150°C
-- -- 10 µA
I
GSSF
Gate-Body Leakage Current, Forward
V
GS
= 25 V, V
DS
= 0 V
-- -- 100 nA
I
GSSR
Gate-Body Leakage Current, Reverse
V
GS
= -25 V, V
DS
= 0 V
-- -- -100 nA
On Characteri st ics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 µA
2.0 -- 4.0 V
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10 V , I
D
= 25 A
-- 0.018 0.022 Ω
g
FS
Forward Transconductance
V
DS
= 25 V, I
D
= 25 A
-- 22 -- S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
-- 1180 1540 pF
C
oss
Output Capacitance -- 440 580 pF
C
rss
Reverse Transfer Capacitance -- 65 90 pF
Switching Characteristics
t
d(on)
Turn-On Delay T ime
V
DD
= 30 V, I
D
= 25 A,
R
G
= 25 Ω
-- 15 40 ns
t
r
Turn-On Rise T ime -- 105 220 ns
t
d(off)
Turn-Off De l a y Time -- 6 0 130 n s
t
f
Turn-Off F a ll Time -- 6 5 140 ns
Q
g
Total Gate Charge
V
DS
= 48 V, I
D
= 50 A,
V
GS
= 10 V
-- 31 41 nC
Q
gs
Gate-Source Charge -- 8 -- nC
Q
gd
Gate-Drain Charge -- 13 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current -- -- 50 A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current -- -- 200 A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 50 A
-- -- 1.5 V
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
S
= 50 A,
dI
F
/ dt = 100 A/µs
-- 52 -- ns
Q
rr
Reverse Recovery Charge -- 75 -- nC
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
P50N06C
© 2006 Thinki Semiconductor Co., Ltd.
http://www.thinkisemi.com/
Page 2/6
Rev.08C