Production specification
Schottky Barrier Diodes MBR2030CT…MBR20100CT
X001 www.gmicroelec.com
Rev.A 1
FEATURES
z High Surge Capacity.
z For Use In Low Voltage,High Frequency Inverters,
Free Wheeling and Polarity Protection Applications.
z Metal Silicon Junction,Majority Carrier Conduction.
z High Current Capacity,Low Forward Voltage Drop.
z Guard Ring for Over Voltage Protection.
TO-220AB
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
MBR
2030
CT
MBR
2035
CT
MBR
2040
CT
MBR
2045
CT
MBR
2050
CT
MBR
2060
CT
MBR
2080
CT
MBR
20100
CT
Unit
V
RRM
Repetitive Peak
Reverse Voltage
30 35 40 45 50 60 80 100 V
V
RMS
RMS Voltage
21 25 28 32 35 42 56 70 V
V
DC
DC Blocking Voltage
30 35 40 45 50 60 80 100 V
I
F(AV)
Average Forward
Rectified Current@T
A
=100℃
20 A
I
FSM
Peak Forward Surge Current
8.3ms Single Half Sine-wave
superimposed on rated load
150 A
R
θ
JC
Thermal Resistance
(Note1)
2.0 ℃/W
T
j
T
stg
Operating Junction and
StorageTemperature Range
-55 to +150 ℃
Note:1.Thermal resistance from junction to case.
Pb
Lead-free
Production specification
Schottky Barrier Diodes MBR2030CT…MBR20100CT
X001 www.gmicroelec.com
Rev.A 2
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
MBR2030CT-
MBR2045CT
MBR2050CT-
MBR2060CT
MBR2080CT-
MBR20100CT
Parameter Symbol Test conditions
MAX
UNIT
Reverse Current
I
R
V
RM
=V
RRM
,T
A
=25℃
V
RM
=V
RRM
,T
A
=125℃
0.1
15
0.1
25
0.1
50
mA
Forward Voltage
V
F
I
F
=10A ,T
A
=25℃
I
F
=10A ,T
A
=125℃
0.70
-
0.80
0.57
0.85
0.70
V
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified