Production specification
Schottky Barrier Diodes MBR20150CT,MBR20200CT
X014 www.gmicroelec.com
Rev.A 1
FEATURES
z Metal-Semicondutcor Junction With Guard Ring.
z Epitaxial Construction.
z Low Forward Voltage Drop,Low Switching Losses.
z High Surge Capacity.
z For Use in Low Voltage,High Frequency Inverters Free
Wheeling,and Polarity Protection Applications.
TO-220AB
MAXIMUM RATING
operating temperature range applies unless otherwise specified
Symbol Parameter
MBR20150CT MBR20200CT
Unit
V
RRM
Recurrent Peak Reverse Voltage
150 200 V
V
RMS
RMS Reverse Voltage
105 140 V
V
DC
DC Blocking Voltage
150 200 V
I
(AV)
Average Forward Total Device Rectified Current
@T
A
=100℃
20 A
I
FSM
Peak Forward Surge Current 8.3ms Single Half
Sine-wave Superimosed on Rated Load
150 A
R
θ
JC
Typical Thermal Resistance Junction to Case
(Note 1)
1.5 ℃/W
T
j
T
stg
Operating Junction and StorageTem-perature Range
-55 to +150 ℃
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
MBR20150CT MBR20200CT
Parameter Symbol Test conditions
MAX
UNIT
Reverse Current I
R
V
R
=V
RRM
,T
A
=25℃
V
R
=V
RRM
,T
A
=125℃
0.1
50
mA
Forward Voltage V
F
I
F
=10A 0.90 0.95 V
Pb
Lead-free
