FQP50N06L — N-Channel QFET
®
MOSFET
©2001 Semiconductor Components Industries
, LLC.
October-2017,
Rev.
3
Publication Order Number:
FQP50N06L/D
FQP50N06L
N-Channel QFET
®
MOSFET
60 V, 52.4 A, 21 mΩ
Description
This N-Channel enhancement mode power MOSFET is
produced using ON Semiconductor’s proprietary
planar stripe and DMOS tec
hnology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
audio amplifier, DC motor control, and variable switching
power applications.
Features
• 52.4 A, 60 V, R
DS(on)
= 21 mΩ (Max.) @ V
GS
= 10 V,
I
D
= 26.2 A
• Low Gate Charge (Typ. 24.5 nC)
• Low Crss (Typ. 90 pF)
• 100% Avalanche Tested
• 175°C Maximum Junction Temperature Rating
TO-220
G
D
S
G
S
D
Absolute Maximum Ratings T
C
= 25°C unless otherwise noted.
Thermal Characteristics
Symbol Parameter FQP50N06L Unit
V
DSS
Drain-Source Voltage 60 V
I
D
Drain Current
- Continuous (T
C
= 25°C)
52.4 A
- Continuous (T
C
= 100°C)
37.1 A
I
DM
Drain Current - Pulsed
(Note 1)
210 A
V
GSS
Gate-Source Voltage ± 20 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
990 mJ
I
AR
Avalanche Current
(Note 1)
52.4 A
E
AR
Repetitive Avalanche Energy
(Note 1)
12.1 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
7.0 V/ns
P
D
Power Dissipation (T
C
= 25°C)
121 W
- Derate above 25°C 0.81 W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +175 °C
T
L
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 seconds
300 °C
Symbol Parameter FQP50N06L Unit
R
θJC
Thermal Resistance, Junction-to-Case, Max. 1.24 °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient, Max. 62.5 °C/W
FQP50N06L — N-Channel QFET
®
MOSFET
www.onsemi.com
2
Package Marking and Ordering Information
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FQP50N06L FQP50N06L TO-220 Tube N/A N/A 50 units
Electrical Characteristics T
C
= 25°C unless otherwise noted.
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 300 μH, I
AS
= 52.4 A, V
DD
= 25 V, R
G
= 25 Ω, starting T
J
= 25°C.
3. I
SD
≤ 52.4 A, di/dt ≤ 300 A/μs, V
DD
≤ BV
DSS,
starting T
J
= 25°C.
4. Essentially independent of operating temperature.
Symbol Parameter Test Conditions Min Typ Max Unit
Off
Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
60 -- -- V
ΔBV
DSS
/ ΔT
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 μA, Referenced to 25°C
-- 0.06 -- V/°C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 60 V, V
GS
= 0 V
-- -- 1 μA
V
DS
= 48 V, T
C
= 150°C
-- -- 10 μA
I
GSSF
Gate-Body Leakage Current, Forward
V
GS
= 20 V, V
DS
= 0 V
-- -- 100 nA
I
GSSR
Gate-Body Leakage Current, Reverse
V
GS
= -20 V, V
DS
= 0 V
-- -- -100 nA
On Ch
aracteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
1.0 -- 2.5 V
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10 V, I
D
= 26.2 A
V
GS
= 5 V, I
D
=26.2 A
--
--
0.
017
0.020
0.021
0.025
Ω
g
FS
Forward Transconductance
V
DS
= 25 V, I
D
= 26.2 A
-- 40 -- S
Dyn
amic Characteristics
C
iss
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
-- 1250 1630 pF
C
oss
Output Capacitance -- 445 580 pF
C
rss
Reverse Transfer Capacitance -- 90 120 pF
Swit
ching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= 30 V, I
D
= 26.2 A,
R
G
= 25 Ω
(Note 4)
-- 20 50 ns
t
r
Turn-On Rise Time -- 380 770 ns
t
d(off)
Turn-Off Delay Time -- 80 170 ns
t
f
Turn-Off Fall Time -- 145 300 ns
Q
g
Total Gate Charge
V
DS
= 48 V, I
D
= 52.4 A,
V
GS
= 5 V
(Note 4)
-- 24.5 32 nC
Q
gs
Gate-Source Charge -- 6 -- nC
Q
gd
Gate-Drain Charge -- 14.5 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current -- -- 52.4 A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current -- -- 210 A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 52.4 A
-- -- 1.5 V
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
S
= 52.4 A,
dI
F
/ dt = 100 A/μs
-- 65 -- ns
Q
rr
Reverse Recovery Charge -- 125 -- nC