© 2000 IXYS All rights reserved
1 - 4
IGBT Modules
Short Circuit SOA Capability
Square RBSOA
MII 150-12 A4 MID 150-12 A4
MDI 150-12 A4
Symbol Conditions Maximum Ratings
V
CES
T
J
= 25°C to 150°C 1200 V
V
CGR
T
J
= 25°C to 150°C; R
GE
= 20 kW 1200 V
V
GES
Continuous ±20 V
V
GEM
Transient ±30 V
I
C25
T
C
= 25°C 180 A
I
C80
T
C
= 80°C 120 A
I
CM
T
C
= 80°C, t
p
= 1 ms 240 A
t
SC
V
GE
= ±15 V, V
CE
= V
CES
, T
J
= 125°C10ms
(SCSOA) R
G
= 10 W, non repetitive
RBSOA V
GE
= ±15 V, T
J
= 125°C, R
G
= 10 W I
CM
= 200 A
Clamped inductive load, L = 100 mHV
CEK
< V
CES
P
tot
T
C
= 25°C 760 W
T
J
150 °C
T
stg
-40 ... +150 °C
V
ISOL
50/60 Hz, RMS t = 1 min 4000 V~
I
ISOL
£ 1 mA t = 1 s 4800 V~
Insulating material: Al
2
O
3
M
d
Mounting torque (module) 2.25-2.75 Nm
20-25 lb.in.
(teminals) 2.5-3.7 Nm
22-33 lb.in.
d
S
Creepage distance on surface 10 mm
d
A
Strike distance through air 9.6 mm
a Max. allowable acceleration 5 0 m/s
2
Weight Typical 250 g
8.8 oz.
Data according to a single IGBT/FRED unless otherwise stated.
8
9
1
2
3
11
10
10
11
9
8
2
1
3
MII
2
1
3
10
11
MID
2
1
3
9
8
MDI
E 72873
I
C25
= 180 A
V
CES
= 1200 V
V
CE(sat) typ.
= 2.2 V
Features
●
NPT IGBT technology
●
low saturation voltage
●
low switching losses
●
switching frequency up to 30 kHz
●
square RBSOA, no latch up
●
high short circuit capability
●
positive temperature coefficient for
easy parallelling
●
MOS input, voltage controlled
●
ultra fast free wheeling diodes
●
package with DCB ceramic base plate
●
isolation voltage 4800 V
●
UL registered E72873
Advantages
●
space and weight savings
●
reduced protection circuits
Typical Applications
●
AC and DC motor control
●
AC servo and robot drives
●
power supplies
●
welding inverters
030
© 2000 IXYS All rights reserved
2 - 4
MII 150-12 A4 MID 150-12 A4
MDI 150-12 A4
Symbol Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
V
(BR)CES
V
GE
= 0 V 1200 V
V
GE(th)
I
C
= 4 mA, V
CE
= V
GE
4.5 6.5 V
I
CES
V
CE
= V
CES
T
J
= 25°C 7.5 mA
T
J
= 125°C11mA
I
GES
V
CE
= 0 V, V
GE
= ±20 V ±400 nA
V
CE(sat)
I
C
= 100 A, V
GE
= 15 V 2.2 2.7 V
C
ies
6.6 nF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz 1 nF
C
res
0.44 nF
t
d(on)
100 ns
t
r
70 ns
t
d(off)
500 ns
t
f
70 ns
E
on
15 mJ
E
off
11.5 mJ
R
thJC
0.17 K/W
R
thJS
with heatsink compound 0.33 K/W
Reverse Diode (FRED) Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
V
F
I
F
= 100 A, V
GE
= 0 V, 2.3 2.5 V
I
F
= 100 A, V
GE
= 0 V, T
J
= 125°C 1.8 1.9 V
I
F
T
C
= 25°C 200 A
T
C
= 80°C 130 A
I
RM
I
F
= 100 A, V
GE
= 0 V, -di
F
/dt = 800 A/ms80A
t
rr
T
J
= 125°C, V
R
= 600 V 200 n s
R
thJC
0.33 K/W
R
thJS
with heatsink compound 0.66 K/W
Inductive load, T
J
= 125°C
I
C
= 100 A, V
GE
= ±15 V
V
CE
= 600 V, R
G
= 10 W
Dimensions in mm (1 mm = 0.0394")
Equivalent Circuits for Simulation
Conduction
IGBT (typ. at V
GE
= 15 V; T
J
= 125°C)
V
0
= 1.5 V; R
0
= 10.2 mW
Free Wheeling Diode (typ. at T
J
= 125°C)
V
0
= 1.3 V; R
0
= 5.5 mW
Thermal Response
IGBT (typ.)
C
th1
= 0.27 J/K; R
th1
= 0.163 K/W
C
th2
= 0.63 J/K; R
th2
= 0.004 K/W
Free Wheeling Diode (typ.)
C
th1
= 0.19 J/K; R
th1
= 0.326 K/W
C
th2
= 0.36 J/K; R
th2
= 0.007 K/W