Vishay Siliconix
Si2308BDS
Document Number: 69958
S-83053-Rev. B, 29-Dec-08
www.vishay.com
1
New Product
N-Channel 60-V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET
®
Power MOSFET
• 100 % R
g
Tested
• 100 % UIS Tested
APPLICATIONS
• Battery Switch
• DC/DC Converter
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)
I
D
(A)
a
Q
g
(Typ.)
60
0.156 at V
GS
= 10 V
2.3
2.3 nC
0.192 at V
GS
= 4.5 V
2.1
Ordering Information: Si2308BDS-T1-E3 (Lead (Pb)-free)
Si2308BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
S
D
Top View
2
3
TO-236
(SSOT23)
1
Si2308BDS (L8)*
*Marking Code
Notes:
a. Based on T
C
= 25 °C.
b. Surfa
ce Mounted on 1" x 1" FR4 board.
c.
t = 5 s.
d. Maximu
m under Steady State conditions is 130 °C/W.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol Limit
Unit
Drain-Source Voltage V
DS
60
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
2.3
A
T
C
= 70 °C
1.8
T
A
= 25 °C
1.9
b, c
T
A
= 70 °C
1.5
b, c
Pulsed Drain Current I
DM
8
Continuous Source-Drain Diode Current
T
C
= 25 °C
I
S
1.39
T
A
= 25 °C
0.91
b, c
Avalanche Current
L = 0.1 mH
I
AS
6
Single-Pulse Avalanche Energy E
AS
1.8
mJ
Maximum Power Dissipation
T
C
= 25 °C
P
D
1.66
W
T
C
= 70 °C
1.06
T
A
= 25 °C
1.09
b, c
T
A
= 70 °C
0.7
b, c
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maxim
um Junction-to-Ambient
b, d
≤ 5 s R
thJA
90 115
°C/W
Maximum Junction-to-Foot (Drain) Steady State R
thJF
60 75
Vishay Siliconix
Si2308BDS
www.vishay.com
2
Document Number: 69958
S-83053-Rev. B, 29-Dec-08
New Product
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
MOSFET SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
DS
= 0 V, I
D
= 250 µA
60 V
V
DS
Temperature Coefficient ΔV
DS
/T
J
I
D
= 250 µA
55
mV/°C
V
GS(th)
Temperature Coefficient
Δ
V
GS(th)
/T
J
- 5
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
13V
Gate-Source Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60 V, V
GS
= 0 V
1
µA
V
DS
= 60 V, V
GS
= 0 V, T
J
= 55 °C
10
On-State Drain Current
a
I
D(on)
V
DS
≥ 5 V, V
GS
= 10 V
8A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 1.9 A
0.130 0.156
Ω
V
GS
= 4.5 V, I
D
= 1.7 A
0.160 0.192
Forward Transconductance
a
g
fs
V
DS
= 15V, I
D
= 1.9 A
5S
Dynamic
b
Input Capacitance
C
iss
V
DS
= 30 V, V
GS
= 0 V, f = 1 MHz
190
pF
Output Capacitance
C
oss
26
Reverse Transfer Capacitance
C
rss
15
Total Gate Charge
Q
g
V
DS
= 30 V, V
GS
= 10 V, I
D
= 1.9 A
4.5 6.8
nC
V
DS
= 30 V, V
GS
= 4.5 V, I
D
= 1.9 A
2.3 3.5
Gate-Source Charge
Q
gs
0.8
Gate-Drain Charge
Q
gd
1
Gate Resistance
R
g
f = 1 MHz 0.6 2.8 5.6 Ω
Tur n - O n D e l ay Time
t
d(on)
V
DD
= 30 V, R
L
= 20 Ω
I
D
≅ 1.5 A, V
GEN
= 10 V, R
G
= 1 Ω
46
ns
Rise Time
t
r
10 15
Turn-Off Delay Time
t
d(off)
10 15
Fall Time
t
f
710.5
Tur n - O n D e l ay Time
t
d(on)
V
DD
= 30 V, R
L
= 20 Ω
I
D
= 1.5 A, V
GEN
= 4.5 V, R
G
= 1 Ω
15 23
ns
Rise Time
t
r
16 24
Turn-Off Delay Time
t
d(off)
11 17
Fall Time
t
f
11 17
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I
S
T
C
= 25 °C
1.39
A
Pulse Diode Forward Current
a
I
SM
8
Body Diode Voltage
V
SD
I
S
= 1.5 A
0.8 1.2 V
Body Diode Reverse Recovery Time
t
rr
I
F
= 1.5 A, dI/dt = 100 A/µs, T
J
= 25 °C
15 23 ns
Body Diode Reverse Recovery Charge
Q
rr
10 15 nC
Reverse Recovery Fall Time
t
a
12
ns
Reverse Recovery Rise Time
t
b
3