Vishay Siliconix
Si7430DP_RC
Document Number: 70390
Revision 21-Mar-07
www.vishay.com
1
R-C Thermal Model Parameters
DESCRIPTION
The parametric values in the R-C thermal model have
been derived using curve-fitting techniques. These
techniques are described in "A Simple Method of
Generating Thermal Models for a Power MOSFET"[1].
When implemented in P-Spice, these values have
matching characteristic curves to the Single Pulse
Transient Thermal Impedance curves for the
MOSFET.
R-C values for the electrical circuit in the Foster/Tank
and Cauer/Filter configurations are included.
Note:
For a detailed explanation of implementing these values in
P-SPICE, refer to Application Note AN609 Thermal Simulations Of
Power MOSFETs on P-SPICE Platform.
R-C THERMAL MODEL FOR TANK CONFIGURATION
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data
sheet of the same number for guaranteed specification limits.
R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance (°C/W)
Junction to Ambient Case
Foot
RT1
853.3736 m
11.2528 m N/A
RT2 6.5915 1.0672 N/A
RT3 8.7518 388.4238 m N/A
RT4 48.7006 339.6485 m N/A
Thermal Capacitance (Joules/°C)
Junction to Ambient Case
Foot
CT1 1.6914 m 319.4689 u N/A
CT2 50.3961 m 17.6032 m N/A
CT3 320.7765 m 28.9712 m N/A
CT4 1.3408 1.3234 m N/A
www.vishay.com
2
Document Number: 70390
Revision 21-Mar-07
Vishay Siliconix
Si7430DP_RC
R-C THERMAL MODEL FOR FILTER CONFIGURATION
Note: NA indicates not applicable
Reference:
[1] "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002
R-C VALUES FOR FILTER CONFIGURATION
Thermal Resistance (°C/W)
Junction to Ambient Case
Foot
RF1 7.5262 410.5716 m N/A
RF2 6.6542 340.3581 m N/A
RF3 6.7648 814.5620 m N/A
RF4 44.0194 235.0476 m N/A
Thermal Capacitance (Joules/°C)
Junction to Ambient Case Foot
CF1 23.7054 m 1.3854 m N/A
CF2 194.3857 m 4.4400 m N/A
CF3 18.0262 m 10.2885 m N/A
CF4 1.2661 3.2121 u N/A