Vishay Siliconix
SUD50N06-09L_RC
Document Number: 69607
Revision: 10-Sep-07
www.vishay.com
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R-C Thermal Model Parameters
DESCRIPTION
The parametric values in the R-C thermal model have
been derived using curve-fitting techniques. These
techniques are described in "A Simple Method of
Generating Thermal Models for a Power MOSFET"[1].
When implemented in P-Spice, these values have
matching characteristic curves to the Single Pulse
Transient Thermal Impedance curves for the
MOSFET.
R-C values for the electrical circuit in the Foster/Tank
and Cauer/Filter configurations are included.
Note:
For a detailed explanation of implementing these values in
P-SPICE, refer to Application Note AN609 Thermal Simulations Of
Power MOSFETs on P-SPICE Platform.
R-C THERMAL MODEL FOR TANK CONFIGURATION
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data
sheet of the same number for guaranteed specification limits.
R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance (°C/W)
Junction to Ambient Case
Foot
RT1 N/A 170.8589 m N/A
RT2 N/A 173.9218 m N/A
RT3 N/A 387.1914 m N/A
RT4 N/A 368.0279 m N/A
Thermal Capacitance (Joules/°C)
Junction to Ambient Case
Foot
CT1 N/A 2.3474 m N/A
CT2 N/A 11.7100 m N/A
CT3 N/A 46.6962 m N/A
CT4 N/A 149.1069 m N/A
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Document Number: 69607
Revision: 10-Sep-07
Vishay Siliconix
SUD50N06-09L_RC
R-C THERMAL MODEL FOR FILTER CONFIGURATION
Note: NA indicates not applicable
Reference:
[1] "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002
R-C VALUES FOR FILTER CONFIGURATION
Thermal Resistance (°C/W)
Junction to Ambient Case
Foot
RF1 N/A 258.6821 m N/A
RF2 N/A 252.4542 m N/A
RF3 N/A 496.3073 m N/A
RF4 N/A 92.5564 m N/A
Thermal Capacitance (Joules/°C)
Junction to Ambient Case Foot
CF1 N/A 1.7150 m N/A
CF2 N/A 10.7280 m N/A
CF3 N/A 38.4074 m N/A
CF4 N/A 329.3794 m N/A