Document N
umber: 65178 www.vishay.com
Revision: 20-Jul-09 1
Si2308BDS vs. Si2308DS
Specification Comparison
Vishay Siliconix
Description: N-Channel, 60-V (D-S) MOSFET
Package: SOT-23
Pin Out: Identical
Part Number Replacements: Si2308BDS-T1-GE3 replaces Si2308DS-T1-GE3
Si2308BDS-T1-E3 or Si2308BDS-T1-GE3 replaces Si2308DS-T1-E3
Si2308BDS-T1-E3 or Si2308BDS-T1-GE3 replaces Si2308DS-T1
Note
NS denotes not specified in original specification
Specification comparisons are supplied as a courtesy to compare two devices and do not constitute a commercial product
datasheet or any guarantee of identical performance. Designers should refer to the appropriate datasheets of the same number
for guaranteed specification limits.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
PARAMETER SYMBOL Si2308BDS Si2308DS UNIT
Drain-Source Voltage V
DS
60 60
V
Gate-Source Voltage V
GS
± 20 ± 20
Continuous Drain Current
T
A
= 25 °C
I
D
1.9 2.0
A
T
A
= 70 °C 1.5 1.6
Pulsed Drain Current I
DM
810
Continuous Source Current (MOSFET Diode Conduction) I
S
0.91 1.0
Power Dissipation
T
A
= 25 °C
P
D
1.09 1.25
W
T
A
= 70 °C 0.7 0.8
Operating Junction and Storage Temperature Range T
J
and T
stg
- 55 to 150 - 55 to 150 °C
Maximum Junction-to-Ambient R
thJA
115 100 °C/W
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
PARAMETER SYMBOL
Si2308BDS Si2308DS
UNITMIN. TYP. MAX. MIN. TYP. MAX.
Static
Gate-Threshold Voltage V
GS(th)
1.0 3.0 1.5 3.0 V
Gate-Body Leakage I
GSS
± 100 ± 100 nA
Zero Gate Voltage Drain Current I
DSS
1.0 0.5 µA
On-State Drain Current
V
GS
= 10 V
I
D(on)
86
A
V
GS
= 4.5 V NS 4
Drain-Source On-Resistance
V
GS
= 10 V
R
DS(on)
0.130 0.156 0.125 0.160
Ω
V
GS
= 4.5 V 0.160 0.192 0.155 0.220
Forward Transconductance g
fs
54.6S
Diode Forward Voltage V
SD
0.8 1.2 0.77 1.2 V
Dynamic
Input Capacitance C
iss
190 240
pF
Output Capacitance C
oss
26 50
Reverse Transfer Capacitance C
rss
15 15
Total Gate Charge Q
g
4.5 6.8 4.8 10
Gate-Source Charge Q
gs
0.8 0.8
Gate-Drain Charge Q
gd
1.0 1.0
Gate Resistance R
g
0.6 2.8 5.6 0.5 NS 3.3 Ω
Switching
Turn-On-Time
t
d(on)
15 23 7 15
ns
t
r
16 24 10 20
Turn-Off-Time
t
d(off)
11 17 17 35
t
f
11 17 6 15