桂林斯壯微電子有限責任公司
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Micro-Electronics
Micro-Electronics
Micro-Electronics
Micro-Electronics
Co.,Ltd.
Co.,Ltd.
Co.,Ltd.
Co.,Ltd.
GM S 2 301
■ ELECTRICAL
ELECTRICAL
ELECTRICAL
ELECTRICAL
CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS
電特性
(T
A
=25 ℃ unless otherwise noted 如無特殊說明,溫度爲 25 ℃ )
Pulse Width < 300 μ s; Duty Cycle < 2.0%
Drain - Source Breakdown Voltage
漏 極 - 源 極擊穿電壓 ( I
D
= - 25 0 u
A,
V
GS
=0 V )
栅 極 開 启 電壓 ( I
D
= - 25 0 u
A,
V
GS
= V
DS
)
Drain - Source O n Voltage
漏 極 - 源 極導通電壓 ( I
D
= - 5 0 m
A,
V
GS
= - 5V )
( I
D
= - 500m
A,
V
GS
= - 1 0 V )
Diode Forward V oltage Drop
内附二 極 管正向 壓 降 ( I
S
= -0.75
A,
V
GS
=0 V )
Zero Gate V oltage Drain Current
零栅 壓 漏 極電流 (V
GS
= 0
V,
V
DS
= -16V )
(V
GS
= 0
V,
V
DS
= -16V
,
T
A
= 5 5 ℃ )
栅 極 漏 電流 (V
GS
= + 8
V,
V
DS
= 0 V)
Static Drain-Source On-State Resistance
静态漏源 導通電 阻 ( I
D
= 2.6
A,
V
GS
= 4. 5V )
(V
GS
= 0
V,
V
DS
= -6
V,
f=1 MHz)
Common Source Output Capacitance
共源 輸出電容 (V
GS
= 0
V,
V
DS
= -6
V,
f=1 MHz)
(V
DS
= -6
V,
I
D
= -1 A
,
R
GEN
= 6 Ω )
(V
DS
= -6
V,
I
D
= -1 A
,
R
GEN
= 6 Ω )