桂林斯壯微電子有限責任公司
Guilin
Guilin
Guilin
Guilin Strong
Strong
Strong
Strong Micro-Electronics
Micro-Electronics
Micro-Electronics
Micro-Electronics Co.,Ltd.
Co.,Ltd.
Co.,Ltd.
Co.,Ltd.
GM 3416
SOT-23 場效應晶體管 (SOT-23 Field Effect Transistors)
N
N
N
N -Channel
-Channel
-Channel
-Channel Enhancement-Mode
Enhancement-Mode
Enhancement-Mode
Enhancement-Mode MOS
MOS
MOS
MOS FET
FET
FET
FET With
With
With
With ESD
ESD
ESD
ESD
N
N
N
N
溝道增強型 帶靜電保護
MOS
MOS
MOS
MOS
場效應管
■ MAXIMUM
MAXIMUM
MAXIMUM
MAXIMUM RATINGS
RATINGS
RATINGS
RATINGS 最大額定值
Characteristic
特性參數
Symbol
符號
Max
最大值
Unit
單位
Drain - Source V oltage
漏 極 - 源 極電壓
B V
DSS
20 V
Gate - Source Voltage
栅 極 - 源 極電壓
V
GS
+ 8
V
Drain Current (continuous)
漏 極電流 - 連續
I
D
6.5
A
Drain Current (pulsed)
漏 極電流 - 脉冲
I
DM
30 A
Total Device Dissipation
總耗散功率
T
A
=
25
℃ 環境溫度爲
25
℃
P
D
140 0 m W
Junct io n 結溫
T
J
150 ℃
Storage Temperature
儲存溫度
T
stg
-55to+15 0
℃
■
DEVICE
DEVICE
DEVICE
DEVICE MARKING
MARKING
MARKING
MARKING
打標
GM
GM
GM
GM 3416
3416
3416
3416 =
=
=
= A
A
A
A F
F
F
F
桂林斯壯微電子有限責任公司
Guilin
Guilin
Guilin
Guilin Strong
Strong
Strong
Strong Micro-Electronics
Micro-Electronics
Micro-Electronics
Micro-Electronics Co.,Ltd.
Co.,Ltd.
Co.,Ltd.
Co.,Ltd.
GM 3416
■ ELECTRICAL
ELECTRICAL
ELECTRICAL
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS 電特性
(T
A
=25 ℃ unless otherwise noted 如無特殊說明，溫度爲 25 ℃ )
Characteristic
特性參數
Symbol
符號
Min
最小值
Typ
典型 值
Max
最大值
Unit
單位
Drain - Source Breakdown Voltage
漏 極 - 源 極擊穿電壓 ( I
D
= 25 0 u A, V
GS
=0 V )
B V
DSS
2 0
— —
V
Gate Threshold Voltage
栅 極 開 启 電壓
( I
D
= 25 0 u A, V
GS
= V
DS
)
V
G S ( th )
0. 4
— 1
V
Diode Forward Voltage Drop
内附二 極 管正向 壓 降 ( I
S
= 1 A, V
GS
=0 V )
V
SD
—
— 1
V
Zero Gate Voltage Drain Current
零栅 壓 漏 極電流
(V
GS
= 0
V,
V
DS
= 16V )
(V
GS
= 0
V,
V
DS
=
16V
, T
A
=
5 5
℃
)
I
DSS
— — 1
5
u A
Gate Body Leakage
栅 極 �� 電流 (V
GS
= + 4.5
V,
V
DS
= 0 V)
(V
GS
= + 8
V,
V
DS
= 0 V)
I
GSS
— — + 1
+ 10
u A
Static Drain-Source On-State Resistance
静态漏源 導通電 阻 ( I
D
= 6.5 A, V
GS
= 4. 5V )
R
DS ( ON )
— — 22 m Ω
Static Drain-Source On-State Resistance
静态漏源 導通電 阻 ( I
D
= 5.5 A, V
GS
= 2.5 V )
R
DS ( ON )
— — 26 m Ω
Static Drain-Source On-State Resistance
静态漏源 導通電 阻
( I
D
= 5 A, V
GS
= 1.8 V )
R
DS ( ON )
— — 34 m Ω
Input Capacitance 輸入電容
(V
GS
= 0
V,
V
DS
= 10
V,
f=1 MHz)
C
ISS
— 116 0 — pF
Output Capacitance
輸出電容
(V
GS
= 0
V,
V
DS
= 10
V,
f=1 MHz)
C
OSS
— 1 80 — pF
Turn-ON Time 开启 時間
(V
DS
= 10
V,
I
D
= 3 A , R
GEN
= 6 Ω )
t
(on)
— 8 — ns
Turn-OFF Time 关断 時間
(V
DS
= 10
V,
I
D
= 3 A , R
GEN
= 6 Ω )
t
(off)
— 60 — ns
Pulse Width < 300 μ s; Duty Cycle < 2.0%