桂林斯壯微電子有限責任公司
Guilin
Guilin
Guilin
Guilin Strong
Strong
Strong
Strong Micro-Electronics
Micro-Electronics
Micro-Electronics
Micro-Electronics Co.,Ltd.
Co.,Ltd.
Co.,Ltd.
Co.,Ltd.
GM 7002
SOT-23 場效應晶體管 (SOT-23 Field Effect Transistors)
N
N
N
N -Channel
-Channel
-Channel
-Channel Enhancement-Mode
Enhancement-Mode
Enhancement-Mode
Enhancement-Mode MOS
MOS
MOS
MOS FETs
FETs
FETs
FETs
N
N
N
N 沟道增强型 MOS
MOS
MOS
MOS 场效应管
■ MAXIMUM
MAXIMUM
MAXIMUM
MAXIMUM RATINGS
RATINGS
RATINGS
RATINGS 最大額定值
Characteristic 特性參數 Symbol 符號 Max 最大值 Unit 單位
Drain - Source
Voltage
漏 極 - 源 極電壓
B
V
DSS
60 V
Gate - Source
Voltage
栅 極 - 源 極電壓
V
GS
+ 2 0
V
Drain Current
-
continuous
漏 極電流 - 連續
I
DR 115
mA
Drain Current - pulsed
漏 極電流 - 脉冲
I
DRM
8 00 mA
■ THERMAL
THERMAL
THERMAL
THERMAL CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS 熱特性
Characteristic 特性
Symbol
符號
Max
最大值
Unit
單位
Total
Device Dissipation 總耗散功率
T
A
= 25 ℃ 環境溫度爲 25 ℃
Derate above25 ℃ 超過 25 ℃ 遞減
P
D
225
1.8
mW
mW/ ℃
Thermal Resistance Junction to Ambient
熱 阻
R
Θ
JA 417
℃
/W
Junct io n and Storage Temperature
結溫和儲存溫度
T
J
,
T
stg
150 ℃ , -55to+150 ℃
桂林斯壯微電子有限責任公司
Guilin
Guilin
Guilin
Guilin Strong
Strong
Strong
Strong Micro-Electronics
Micro-Electronics
Micro-Electronics
Micro-Electronics Co.,Ltd.
Co.,Ltd.
Co.,Ltd.
Co.,Ltd.
GM 700 2
■ DEVICE
DEVICE
DEVICE
DEVICE MARKING
MARKING
MARKING
MARKING 打標
GM
GM
GM
GM 7002
7002
7002
7002 =
=
=
= 7002
7002
7002
7002
■ ELECTRICAL
ELECTRICAL
ELECTRICAL
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS 電特性
(T
A
=25 ℃ unless otherwise noted 如無特殊說明，溫度爲 25 ℃ )
Characteristic
特性參數
Symbol
符號
Min
最小值
Typ
典型 值
Max
最大值
Unit
單位
Drain - Source Breakdown
Voltage
漏 極 - 源 極擊穿電壓
( I
D
= 25 0 u A, V
GS
=0 V
)
B
V
DSS
6 0 — — V
Gate Threshold
Voltage
栅 極 開 启 電壓
( I
D
= 25 0 u A, V
GS
= V
DS
)
V
GS ( th )
1. 0 — 2.5 V
Drain - Source O
n
Voltage
漏 極 - 源 極導通電壓
( I
D
= 5 0 m A, V
GS
= 5V
)
( I
D
= 500m A, V
GS
= 1 0 V
)
V
DS ( ON )
— — 0.375
3.75
V
Diode Forward
Voltage
Drop
内附二 極 管正向 壓 降
( I
SD
= 200m A, V
GS
=0 V
)
V
SD
— — 1 . 5 V
Zero Gate
Voltage
Drain Current
零栅 壓 漏 極電流
(V
GS
= 0
V,
V
DS
=
B
V
DSS
)
(V
GS
= 0
V,
V
DS
= 0.8B V
DSS
,
T
A
= 12 5 ℃
)
I
DSS
— — 1
500
u A
Gate Body Leakage
栅 極 漏 電流
(V
GS
= + 20
V,
V
DS
= 0
V)
I
GSS
— — + 100 n A
Static Drain-Source On-State Resistance
静态漏源 導通電 阻
( I
D
= 5 0 m A, V
GS
= 5V
)
( I
D
= 50 0 m A, V
GS
= 10V
)
R
DS ( ON )
— — 7.5
7.5
Ω
Input Capacitance 輸入電容
(V
GS
= 0
V,
V
DS
= 25
V,
f=1 MHz)
C
ISS
— — 50 pF
Common Source Output Capacitance
共源 輸出電容
(V
GS
= 0
V,
V
DS
= 25
V,
f=1 MHz)
C
OSS
— — 25 pF
Turn-ON Time 开启 時間
(V
DS
= 30
V,
I
D
= 200mA ,
R
GEN
= 25 Ω
)
t
(on)
— — 20 ns
Turn-OFF Time 关断 時間
(V
DS
= 30
V,
I
D
= 200mA ,
R
GEN
= 25 Ω
)
t
(off)
— — 40 ns
Reverse Recovery Time 反向恢复 時間
( I
SD
= 800mA , V
GS
=0V)
t
rr
— 400 — ns
1. FR-5=1.0 × 0.75 × 0.062in.
2. Alumina=0.4 × 0.3 × 0.024in.99.5%alumina.
3. Pulse Width < 300 μ
s;
Duty Cycle < 2.0%.