桂林斯壯微電子有限責任公司
Guilin
Guilin
Guilin
Guilin Strong
Strong
Strong
Strong Micro-Electronics
Micro-Electronics
Micro-Electronics
Micro-Electronics Co.,Ltd.
Co.,Ltd.
Co.,Ltd.
Co.,Ltd.
MMBD7000
SWITCHING
SWITCHING
SWITCHING
SWITCHING DIODE
DIODE
DIODE
DIODE 開關二極 管
▉ FEATURES 特點
Characteristic 特性參數 Symbol 符號 Max 最大值 Unit 單位
Power dissipation 耗散功率 P D (Ta=25 ℃ ) 225 mW
Forward Current 正 向電流
I
F
200
mA
Reverse Voltage 反向電壓
V
R
10 0
V
Junction and Storage Temperature
結溫和儲藏溫度
T
J
, T
stg
- 5 5to+150 ℃
■
DEVICE
DEVICE
DEVICE
DEVICE MARKING
MARKING
MARKING
MARKING
打標
MMBD7000
MMBD7000
MMBD7000
MMBD7000 =
=
=
= M5C
M5C
M5C
M5C
■ ELECTRICAL
ELECTRICAL
ELECTRICAL
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS 電特性
(T
(T
(T
(T
A
A
A
A
=
=
=
= 25
25
25
25 ℃ unless
unless
unless
unless otherwise
otherwise
otherwise
otherwise noted
noted
noted
noted 如無特殊 说明 ，溫度爲 25 ℃ )
)
)
)
Characteristic
特性參數
Symbol
符號
Min
最小值
Max
最大值
Unit
單位
Reverse Breakdown Voltage 反向擊穿電壓
(I R =100uA)
V
(BR)
10 0
—
V
Reverse Leakage Current 反向漏電流
(V R = 5 0 V)
(V R = 10 0 V)
I R —
1
3
uA
Forward Voltage(Test Condition) 正向電壓
I
F
=1mA
I
F
=10mA
I
F
= 10 0mA
V
F
550
670
75 0
7 00
8 20
1 1 00
mV
Diode Capacitance
二極體電容
(V
R
=0V,
f=1MHz)
C
D
— 1.5 pF
Reverse Recovery Time
反向恢復時間
T
rr
— 4 nS
▉
SOT-23
内部结构
