桂林斯壯微電子有限責任公司
Guilin
Guilin
Guilin
Guilin Strong
Strong
Strong
Strong Micro-Electronics
Micro-Electronics
Micro-Electronics
Micro-Electronics Co.,Ltd.
Co.,Ltd.
Co.,Ltd.
Co.,Ltd.
GM 34 18
SOT-23 場效應晶體管 (SOT-23 Field Effect Transistors)
N
N
N
N -Channel
-Channel
-Channel
-Channel Enhancement-Mode
Enhancement-Mode
Enhancement-Mode
Enhancement-Mode MOS
MOS
MOS
MOS FETs
FETs
FETs
FETs
N
N
N
N
沟道增强型
MOS
MOS
MOS
MOS
场效应管
■ MAXIMUM
MAXIMUM
MAXIMUM
MAXIMUM RATINGS
RATINGS
RATINGS
RATINGS 最大額定值
Characteristic
特性參數
Symbol
符號
Max
最大值
Unit
單位
Drain - Source V oltage
漏 極 - 源 極電壓
B V
DSS
30 V
Gate - Source Voltage
栅 極 - 源 極電壓
V
GS
+ 12
V
Drain Current (continuous)
漏 極電流 - 連續
I
D
3.8
A
Drain Current (pulsed)
漏 極電流 - 脉冲
I
DM
15 A
Total Device Dissipation
總耗散功率
T
A
= 25 ℃ 環境溫度爲 25 ℃
P
D
1 25 0 m W
Junct io n
結溫
T
J
150
℃
Storage Temperature
儲存溫度
T
stg
-55to+15 0 ℃
■ DEVICE
DEVICE
DEVICE
DEVICE MARKING
MARKING
MARKING
MARKING 打標
GM
GM
GM
GM 3418
3418
3418
3418 =
=
=
= B18
B18
B18
B18
桂林斯壯微電子有限責任公司
Guilin
Guilin
Guilin
Guilin Strong
Strong
Strong
Strong Micro-Electronics
Micro-Electronics
Micro-Electronics
Micro-Electronics Co.,Ltd.
Co.,Ltd.
Co.,Ltd.
Co.,Ltd.
GM 34 18
■ ELECTRICAL
ELECTRICAL
ELECTRICAL
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS 電特性
(T
A
=25 ℃ unless otherwise noted 如無特殊說明，溫度爲 25 ℃ )
Characteristic
特性參數
Symbol
符號
Min
最小值
Typ
典型 值
Max
最大值
Unit
單位
Drain - Source Breakdown Voltage
漏 極 - 源 極擊穿電壓 ( I
D
= 25 0 u A, V
GS
=0 V )
B V
DSS
3 0
— —
V
Gate Threshold Voltage
栅 極 開 启 電壓 ( I
D
= 25 0 u A, V
GS
= V
DS
)
V
G S ( th )
0. 5
1 1. 5
V
Diode Forward V oltage Drop
内附二 極 管正��� 壓 降 ( I
S
= 1 A, V
GS
=0 V )
V
SD
—
— 1
V
Zero Gate Voltage Drain Current
零栅 壓 漏 極電流
(V
GS
= 0
V,
V
DS
= 30 V )
(V
GS
= 0
V,
V
DS
= 30
V
, T
A
=
5 5
℃
)
I
DSS
— — 1
5
u A
Gate Body Leakage
栅 極 漏 電流
(V
GS
= + 12
V,
V
DS
= 0 V)
I
GSS
— — + 100 n A
Static Drain-Source On-State Resistance
静态漏源 導通電 阻 ( I
D
= 3.8 A, V
GS
= 10 V )
R
DS ( ON )
— — 55 m Ω
Static Drain-Source On-State Resistance
静态漏源 導通電 阻
( I
D
= 3.5 A, V
GS
= 4. 5V )
R
DS ( ON )
— — 65 m Ω
Static Drain-Source On-State Resistance
静态漏�� 導通電 阻
( I
D
= 1 A, V
GS
= 2.5 V )
R
DS ( ON )
— — 85 m Ω
Input Capacitance 輸入電容
(V
GS
= 1 0
V,
V
DS
= 15
V,
f=1 MHz)
C
ISS
— 235 — pF
Output Capacitance 輸出電容
(V
GS
= 1 0
V,
V
DS
= 15
V,
f=1 MHz)
C
OSS
— 35 — pF
Turn-ON Time
开启 時間
(V
DS
= 15
V,
V
G S
= 10
V,
R
GEN
= 3 Ω )
t
(on)
— 3.5 — ns
Turn-OFF Time 关断 時間
(V
DS
= 15
V,
V
G S
= 10
V,
R
GEN
= 3 Ω )
t
(off)
— 17.5 — ns
Pulse Width < 300 μ s; Duty Cycle < 2.0%