桂林斯壯微電子有限責任公司
Guilin
Guilin
Guilin
Guilin
Strong
Strong
Strong
Strong
Micro-Electronics
Micro-Electronics
Micro-Electronics
Micro-Electronics
Co.,Ltd.
Co.,Ltd.
Co.,Ltd.
Co.,Ltd.
GM S2302
SOT-23 場效應晶體管 (SOT-23 Field Effect Transistors)
N
N
N
N
-Channel
-Channel
-Channel
-Channel
Enhancement-Mode
Enhancement-Mode
Enhancement-Mode
Enhancement-Mode
MOS
MOS
MOS
MOS
FETs
FETs
FETs
FETs
N
N
N
N
沟道增强型 MOS
MOS
MOS
MOS
场效应管
■ MAXIMUM
MAXIMUM
MAXIMUM
MAXIMUM
RATINGS
RATINGS
RATINGS
RATINGS
最大額定值
■ DEVICE
DEVICE
DEVICE
DEVICE
MARKING
MARKING
MARKING
MARKING
打標
Characteristic 特性參數
Symbol 符號
Max 最大值
Unit 單位
Drain - Source V oltage
漏 極 - 源 極電壓
B V
DSS
16
V
Gate - Source V oltage
栅 極 - 源 極電壓
V
GS
+ 8
V
Drain Current (continuous)
漏 極電流 - 連續
I
D
2.6
A
Drain Current (pulsed)
漏 極電流 - 脉冲
I
DM
1 0
A
Total Device Dissipation
總耗散功率
T
A
= 25 ℃ 環境溫度爲 25 ℃
P
D
450
mW
Junct io n 結溫
T
J
150
℃
Storage Temperature 儲存溫度
T
stg
-55to+15 0
℃
GM
GM
GM
GM
S2302
S2302
S2302
S2302
=
=
=
=
A2
A2
A2
A2
桂林斯壯微電子有限責任公司
Guilin
Guilin
Guilin
Guilin
Strong
Strong
Strong
Strong
Micro-Electronics
Micro-Electronics
Micro-Electronics
Micro-Electronics
Co.,Ltd.
Co.,Ltd.
Co.,Ltd.
Co.,Ltd.
GM S 2 302
■ ELECTRICAL
ELECTRICAL
ELECTRICAL
ELECTRICAL
CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS
電特性
(T
A
=25 ℃ unless otherwise noted 如無特殊說明，溫度爲 25 ℃ )
Pulse Width < 300 μ s; Duty Cycle < 2.0%
Characteristic
特性參數
Symbol
符號
Min
最小值
Typ
典型 值
Max
最大值
Unit
單位
Drain - Source Breakdown V oltage
漏 極 - 源 極擊穿電壓 ( I
D
= 25 0 u
A,
V
GS
=0 V )
B V
DSS
16
—
—
V
Gate Threshold V oltage
栅 極 開 启 電壓 ( I
D
= 25 0 u
A,
V
GS
= V
DS
)
V
G S ( th )
0.4
—
1.2
V
Drain - Source O n V oltage
漏 極 - 源 極導通電壓 ( I
D
= 5 0 m
A,
V
GS
= 5V )
( I
D
= 500m
A,
V
GS
= 1 0 V )
V
DS ( ON )
—
—
0.375
3.75
V
Diode Forward V oltage Drop
内附二 極 管正向 壓 降 ( I
S
= 0.75
A,
V
GS
=0 V )
V
SD
—
—
1 . 2
V
Zero Gate V oltage Drain Current
零栅 壓 漏 極電流 (V
GS
= 0
V,
V
DS
= 12V )
(V
GS
= 0
V,
V
DS
= 12V , T
A
= 5 5 ℃ )
I
DSS
—
—
1
1 0
u A
Gate Body Leakage
栅 極 漏 電流 (V
GS
= + 8
V,
V
DS
= 0 V)
I
GSS
—
—
+ 100
n A
Static Drain-Source On-State Resistance
静态漏源 導通電 阻 ( I
D
= 3
A,
V
GS
= 4. 5V )
( I
D
= 2
A,
V
GS
= 2.5 V )
R
DS ( ON )
—
—
0.09
0.13
Ω
Input Capacitance 輸入電容
(V
GS
= 0
V,
V
DS
= 6
V,
f=1 MHz)
C
ISS
—
—
88 0
pF
Common Source Output Capacitance
共源 輸出電容 (V
GS
= 0
V,
V
DS
= 6
V,
f=1 MHz)
C
OSS
—
—
2 70
pF
Turn-ON Time 开启 時間
(V
DS
= 6
V,
I
D
= 1 A , R
GEN
= 6 Ω )
t
(on)
—
—
20
ns
Turn-OFF Time 关断 時間
(V
DS
= 6
V,
I
D
= 1 A , R
GEN
= 6 Ω )
t
(off)
—
—
65
ns