TIP32, TIP32A,TIP32B, TIP32C
PNP SILICON POWER TRANSISTORS
1
JULY 1968 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
Designed for Complementary Use with the
TIP31 Series
40 W at 25°C Case Temperature
3 A Continuous Collector Current
5 A Peak Collector Current
Customer-Specified Selections Available
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for t
p
≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= -0.4 A, R
BE
= 100 Ω,
V
BE(off)
= 0, R
S
= 0.1 Ω, V
CC
= -20 V.
TINUEULAVLOBMYSGNITAR
Collector-base voltage (I
E
= 0)
TIP32
TIP32A
TIP32B
TIP32C
V
CBO
-80
-100
-120
-140
V
Collector-emitter voltage (I
B
= 0)
TIP32
TIP32A
TIP32B
TIP32C
V
CEO
-40
-60
-80
-100
V
Emitter-base voltage V
EBO
-5 V
Continuous collector current I
C
-3 A
I)1 etoN ees( tnerruc rotcelloc kaeP
CM
-5 A
Continuous base current I
B
-1 A
Continuous device dissipation at (or below) 25°C P)2 etoN ees( erutarepmet esac
tot
40 W
P)3 etoN ees( erutarepmet ria eerf C°52 )woleb ro( ta noitapissid ecived suounitnoC
tot
2 W
IL½)4 etoN ees( ygrene daol evitcudni depmalcnU
C
2
32 mJ
Tegnar erutarepmet noitcnuj gnitarepO
j
-65 to +150 °C
Storage temperature range T
stg
-65 to +150 °C
Tsdnoces 01 rof esac morf mm 2.3 erutarepmet daeL
L
250 °C
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
This series is obsolete and
not recommended for new designs.
OBSOLETE
TIP32, TIP32A,TIP32B, TIP32C
PNP SILICON POWER TRANSISTORS
2
JULY 1968 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
†
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
I
C
= -30 mA
(see Note 5)
I
B
= 0
TIP32
TIP32A
TIP32B
TIP32C
-40
-60
-80
-100
V
I
CES
Collector-emitter
cut-off current
V
CE
= -80 V
V
CE
= -100 V
V
CE
= -120 V
V
CE
= -140 V
V
BE
=0
V
BE
=0
V
BE
=0
V
BE
=0
TIP32
TIP32A
TIP32B
TIP32C
-0.2
-0.2
-0.2
-0.2
mA
I
CEO
Collector cut-off
current
V
CE
= -30 V
V
CE
= -60 V
I
B
=0
I
B
=0
TIP32/32A
TIP32B/32C
-0.3
-0.3
mA
I
EBO
Emitter cut-off
current
V
EB
= -5 V I
C
=0 -1 mA
h
FE
Forward current
transfer ratio
V
CE
= -4 V
V
CE
= -4 V
I
C
= -1 A
I
C
= -3 A
(see Notes 5 and 6)
25
10 50
V
CE(sat)
Collector-emitter
saturation voltage
I
B
= -375 mA I
C
= -3 A (see Notes 5 and 6) -1.2 V
V
BE
Base-emitter
voltage
V
CE
= -4 V I
C
= -3 A (see Notes 5 and 6) -1.8 V
h
fe
Small signal forward
current transfer ratio
V
CE
= -10 V I
C
=-0.5A f = 1 kHz 20
|
h
fe
|
Small signal forward
current transfer ratio
V
CE
= -10 V I
C
=-0.5A f = 1 MHz 3
thermal characteristics
PARAMETER MIN TYP MAX UNIT
R
θJC
Junction to case thermal resistance 3.125 °C/W
R
θJA
Junction to free air thermal resistance 62.5 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS
†
MIN TYP MAX UNIT
t
on
Tu r n -o n t i m e I
C
= -1 A
V
BE(off)
= 4.3 V
I
B(on)
= -0.1 A
R
L
= 30 Ω
I
B(off)
= 0.1 A
t
p
= 20 µs, dc ≤ 2%
0.3 µs
t
off
Turn-off time 1µs
OBSOLETE