TO-220FP
1
2
3
AM15572v1_no_tab
D(2)
G(1)
S(3)
Features
Order code
V
DS
R
DS(on)
max. I
D
STF7N65M6 650 V 0.99 Ω 5 A
• Reduced switching losses
• Lower R
DS(on)
per area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
The new MDmesh™ M6 technology incorporates the most recent advancements to
the well-known and consolidated MDmesh family of SJ MOSFETs.
STMicroelectronics builds on the previous generation of MDmesh devices through its
new M6 technology, which combines excellent R
DS(on)
per area improvement with
one of the most effective switching behaviors available, as well as a user-friendly
experience for maximum end-application efficiency.
Product status link
STF7N65M6
Product summary
Order code STF7N65M6
Marking 7N65M6
Package TO-220FP
Packing Tube
N-channel 650 V, 0.91 Ω typ., 5 A, MDmesh™ M6 Power MOSFET
in a TO‑220FP package
STF7N65M6
Datasheet
DS11822 - Rev 2 - October 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
V
GS
Gate-source voltage ±25 V
I
D
Drain current (continuous) at T
C
= 25 °C
5 A
I
D
Drain current (continuous) at T
C
= 100 °C
3.2 A
I
DM
(1)
Drain current (pulsed) 20 A
P
TOT
Total power dissipation at T
C
= 25 °C
20 W
dv/dt
(2)
Peak diode recovery voltage slope 5
V/ns
dv/dt
(3)
MOSFET dv/dt ruggedness 50
V
ISO
Insulation withstand voltage (RMS) from all three leads to external heat sink
(t = 1 s, T
C
= 25 °C)
2.5 kV
T
J
Operating junction temperature range
-55 to 150 °C
T
stg
Storage temperature range
1. Pulse width limited by safe operating area.
2. I
SD
≤ 5 A, di/dt = 400 A/μs, V
DS peak
< V
(BR)DSS
, V
DD
= 400 V
3. V
DS
≤ 520 V
Table 2. Thermal data
Symbol
Parameter Value Unit
R
thj-case
Thermal resistance junction-case 6.25
°C/W
R
thj-amb
Thermal resistance junction-ambient 62.5
Table 3. Avalanche characteristics
Symbol
Parameter Value Unit
I
AR
Avalanche current, repetitive or not repetitive (pulse width limited by T
jmax.
)
1.5 A
E
as
Single pulse avalanche energy (starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
95 mJ
STF7N65M6
Electrical ratings
DS11822 - Rev 2
page 2/13