µQFN-10L package
I/O 1
I/O 2
GND
I/O 3
I/O 4
Internal ly
not connected
GND
Internal ly
not connected
1
2
4
5
6
8
9
10
3
7
Functional schematic (top view)
Features
• Flow-through routing to keep signal integrity
• Ultralarge bandwidth: 10 GHz
• Ultralow capacitance:
– 0.2 pF (I/O to I/O)
– 0.35 pF (I/O to GND)
• Very Low dynamic resistance: 0.48 Ω
• 100 Ω differential impedance
• Low leakage current: 100 nA at 25 °C
• Extended operating junction temperature range: -40 °C to 150 °C
• Thin package: 0.5 mm max.
• RoHS compliant
• High ESD protection level
• High integration
• Suitable for high density boards
• Complies with following standards:
– MIL-STD 883G Method 3015-7 Class 3B: – 8 kV
– IEC 61000-4-2 level 4: 8 kV (contact discharge), 15 kV (air discharge)
Applications
The HSP051-4M10 is designed to protect against
electrostatic discharge on sub micron technology
circuits driving:
• HDMI 2.0 and 1.4
• USB 3.1 and USB3.0
• Digital Video Interface
• Display Port
• Serial ATA
Description
The HSP051-4M10 is a 4-channel ESD array with a rail to rail architecture designed
specifically for the protection of high speed differential lines.
The ultralow variation of the capacitance ensures very low influence on signal-skew.
The large bandwidth make it compatible with HDMI2.0.4k/2k (=5.94 Gbps) and
USB3.1 (= 10 Gbps).
The device is packaged in μQFN 2.5 mm x 1 mm with a 500 μm pitch.
Product status
HSP051-4M10
4-line ESD protection for high speed lines
HSP051-4M10
Datasheet
DS9805 - Rev 6 - February 2019
For further information contact your local STMicroelectronics sales office.
www.st.com
1 Characteristics
Table 1. Absolute maximum ratings T
amb
= 25 °C
Symbol Parameter Value Unit
V
PP
Peak pulse voltage
IEC 61000-4-2 contact discharge 8
kV
IEC 61000-4-2 air discharge 25
T
j
Operating junction temperature range -40 to +150 °C
T
stg
Storage temperature range -65 to +150 °C
T
L
Maximum lead temperature for soldering during 10 s 260 °C
Table 2. Electrical characteristics T
amb
= 25 °C
Symbol Parameter
Value
Unit
Min. Typ. Max.
V
BR
I
R
= 1 mA
4.5 5.8 V
I
RM
V
RM
= 3.6 V
10 100 nA
V
CL
I
PP
= 1 A, 8/20 µs
10 V
V
CL
IEC 61000-4-2, +8 kV contact (I
PP
= 16 A), measured at 30 ns
13 V
R
d
Dynamic resistance, pulse duration 100 ns
I/O to GND 0.48 Ω
GND to I/O 0.96 Ω
CI/O - I/O VI/O = 0 V, F = 200 MHz to 9 GHz 0.2 0.3 pF
CI/O - GND VI/O = 0 V
F = 200 MHz to 2.5 GHz 0.4 0.55 pF
F = 2.5 GHz to 9 GHz 0.35 0.45 pF
f
C
-3dB 10 GHz
Z
diff
Time domain reflectometry: t
r
= 200 ps (10 - 90%), Z
0
= 100 Ω
85 100 115 Ω
HSP051-4M10
Characteristics
DS9805 - Rev 6
page 2/12