1
2
3
TAB
TO-3P
C(2, TAB)
E(3)
NG1E3C2T
G(1)
Features
• Maximum junction temperature: T
J
= 175 °C
• High speed switching series
• Minimized tail current
• Low saturation voltage: V
CE(sat)
= 1.6 V (typ.) @ I
C
= 40 A
• Tight parameter distribution
• Safe paralleling
• Positive V
CE(sat)
temperature coefficient
• Low thermal resistance
• Very fast soft recovery antiparallel diode
Applications
• Power factor corrector (PFC)
Description
This device is an IGBT developed using an advanced proprietary trench gate field-
stop structure. The device is part of the new HB series of IGBTs, which represents an
optimum compromise between conduction and switching loss to maximize the
efficiency of any frequency converter. Furthermore, the slightly positive V
CE(sat)
temperature coefficient and very tight parameter distribution result in safer paralleling
operation.
Product status link
STGWT30HP65FB
Product summary
Order code STGWT30HP65FB
Marking GWT30HP65FB
Package TO-3P
Packing Tube
Trench gate field-stop 650 V, 30 A high speed HB series IGBT
STGWT30HP65FB
Datasheet
DS11375 - Rev 3 - July 2019
For further information contact your local STMicroelectronics sales office.
www.st.com
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
V
CES
Collector-emitter voltage (V
GE
= 0 V)
650 V
I
C
Continuous collector current at T
C
= 25 °C
60
A
Continuous collector current at T
C
= 100 °C
30
I
CP
(1)
Pulsed collector current 120 A
V
GE
Gate-emitter voltage ±20
V
Transient gate-emitter voltage (t
p
≤ 10 μs)
±30
I
F
(2)
Continuous forward current at T
C
= 25 °C
5
A
Continuous forward current at T
C
= 100 °C
5
I
FP
(3)
Pulsed forward current 10 A
P
TOT
Total power dissipation at T
C
= 25 °C
260 W
T
STG
Storage temperature range -55 to 150
°C
T
J
Operating junction temperature range -55 to 175
1. Pulse width limited by maximum junction temperature.
2. Limited by wires.
3. Pulsed forward current.
Table 2. Thermal data
Symbol
Parameter Value Unit
R
thJC
Thermal resistance junction-case IGBT 0.58
°C/W
R
thJC
Thermal resistance junction-case diode 5
R
thJA
Thermal resistance junction-ambient 50
STGWT30HP65FB
Electrical ratings
DS11375 - Rev 3
page 2/15