1
2
3
4
TO247-4
C(1, TAB)
E(2)
NG4K3E2C1_TAB
G(4)
K(3)
Features
• Maximum junction temperature: T
J
= 175 °C
• High speed switching series
• Minimized tail current
• Low saturation voltage: V
CE(sat)
= 1.6 V (typ.) @ I
C
= 40 A
• Tight parameter distribution
• Safe paralleling
• Positive V
CE(sat)
temperature coefficient
• Low thermal resistance
• Very fast soft recovery antiparallel diode
• Excellent switching performance thanks to the extra driving kelvin pin
Applications
• Photovoltaic inverters
• High frequency converters
Description
This device is an IGBT developed using an advanced proprietary trench gate field-
stop structure. The device is part of the new HB series of IGBTs, which represents an
optimum compromise between conduction and switching loss to maximize the
efficiency of any frequency converter. A faster switching event can be achieved by
the Kelvin pin, which separates power path from driving signal. Furthermore, the
slightly positive V
CE(sat)
temperature coefficient and very tight parameter distribution
result in safer paralleling operation.
Product status link
STGW40H65DFB-4
Product summary
Order code STGW40H65DFB-4
Marking G40H65DFB
Package TO247-4
Packing Tube
Trench gate field-stop 650 V, 40 A high speed HB series IGBT
STGW40H65DFB-4
Datasheet
DS11520 - Rev 4 - June 2019
For further information contact your local STMicroelectronics sales office.
www.st.com
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
V
CES
Collector-emitter voltage (V
GE
= 0 V)
650 V
I
C
Continuous collector current at T
C
= 25 °C
80
A
Continuous collector current at T
C
= 100 °C
40
I
CP
(1)
Pulsed collector current 160 A
V
GE
Gate-emitter voltage ±20
V
Transient gate-emitter voltage ±30
I
F
Continuous forward current at T
C
= 25 °C
80
A
Continuous forward current at T
C
= 100 °C
40
I
FP
(1)
Pulsed forward current 160 A
P
TOT
Total power dissipation at T
C
= 25 °C
283 W
T
STG
Storage temperature range - 55 to 150
°C
T
J
Operating junction temperature range - 55 to 175
1. Pulse width limited by maximum junction temperature.
Table 2. Thermal data
Symbol
Parameter Value Unit
R
thJC
Thermal resistance junction-case IGBT 0.53
°C/W
R
thJC
Thermal resistance junction-case diode 1.14
R
thJA
Thermal resistance junction-ambient 50
STGW40H65DFB-4
Electrical ratings
DS11520 - Rev 4
page 2/15