V
RM
= 1500 V, I
F(AV)
= 0.5 A, t
rr
= 1.5 ns
Fast Recovery Diode
ES1F Data Sheet
ES1F-DSE Rev.1.1 SANKEN ELCTRIC CO., LTD. 1
Dec. 05, 2018 https://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2017
Description
The ES1F is a high voltage fast recovery diode of
1500 V / 0.5 A.
Features
V
RM
----------------------------------------------------- 1500 V
I
F(AV)
------------------------------------------------------ 0.5 A
V
F
--------------------------------------------------------- 2.0 V
t
rr1
-------------------------------------------------------- 1.5 µs
Bare Leads: Pb-free (RoHS Compliant)
Applications
High Voltage Rectification Circuit
(Bridge Circuit, etc.)
Package
Axial (φ2.7 × 5.0L / φ0.78)
(1)
(2)
(1) Cathode
(2) Anode
Not to scale
余白上 35mm
Cathode Mark
(1)
(2)
ES1F
ES1F-DSE Rev.1.1 SANKEN ELCTRIC CO., LTD. 2
Dec. 05, 2018 https://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2017
Absolute Maximum Ratings
Unless otherwise specified, T
A
= 25 °C
Parameter
Symbol
Rating
Unit
Peak Repetitive Reverse Voltage
V
RSM
1500
V
Repetitive Reverse Voltage
V
RM
1500
V
Average Forward Current
I
F(AV)
0.5
A
Surge Forward Current
I
FSM
20
A
I
2
t Limiting Value
I
2
t
2.0
A
2
s
Junction Temperature
T
J
40 to 150
°C
Storage Temperature
T
STG
40 to 150
°C
Electrical Characteristics
Unless otherwise specified, T
A
= 25 °C
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Forward Voltage Drop
V
F
T
J
= 25 °C, I
F
= 0.5 A
2.0
V
T
J
= 100 °C, I
F
= 0.5 A
1.5
V
Reverse Leakage Current
I
R
V
R
= V
RM,
10
µA
Reverse Leakage Current
Under High Temperature
HI
R
V
R
= V
RM
, T
J
= 100 °C
200
µA
Reverse Recovery Time
t
rr1
I
F
= I
RP
= 10 mA
90% recovery point,
T
J
= 25 °C
1.5
µs
t
rr2
I
F
= 10 mA,
I
RP
= 20 mA,
75% recovery point,
T
J
= 25 °C
0.6
µs
Thermal Resistance
(1)
R
th(J-L)
See Figure 1
17
°C/W
Device
Diameter of soldering area: φ3 mm
Cupper thickness: 50 µm
T
L
1.6 mm
10 mm
Figure 1 Lead Temperature Measurement Conditions
(1)
R
th (J-L)
is thermal resistance between junction and lead.