TPCP8604
2014-07-11
1
TOSHIBA Transistor Silicon PNP Diffused Type
TPCP8604
High-Voltage Switching Applications
High breakdown voltage: V
CEO
= −400 V
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage V
CBO
−400 V
Collector-emitter voltage V
CEO
−400 V
Emitter-base voltage V
EBO
−7 V
Collector current
DC (Note 1)
I
C
−0.3
A
Pulse(Note 1)
I
CP
−1
Base current I
B
−0.25 A
Collector power
dissipation
t=10s
P
C
(Note 2)
−2.2
W
DC −1.1
Junction temperature T
j
−150 °C
Storage temperature range T
stg
−55 to 150 °C
Note 1: Ensure that the junction temperature does not exceed 150°C.
Note 2: Device mounted on a 25.4mm x 25.4mm x 1.6mm FR-4 glass
epoxy board (with a dissipating copper surface of 645 mm
2
)
Note 3: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit
: mm
1
．
NC
5
．
NC
2
．
Collector
6
．
Emitter
3
．
Collector
7
．
NC
4
．
Collector
8
．
Base
JEDEC ―
JEITA ―
TOSHIBA 2-3V1D
Weight: 0.05 g (typ.)
2006-02
TPCP8604
2014-07-11
2
Figure 1. Circuit Configuration
(top view)
Figure 2. Marking
(Note 4)
Note 4 ● on lower left of the marking indicates Pin #1.
* Weekly code (three digits)
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current I
CBO
V
CB
= −400 V, I
E
= 0 ― ― −10 μA
Emitter cut-off current I
EBO
V
EB
= −7 V, I
C
= 0 ― ― −1 μA
Collector-emitter breakdown voltage V
(BR)CEO
I
C
= −10 mA, I
B
= 0 −400 ― ― V
DC current gain
h
FE
(1) V
CE
= −5 V, I
C
= −20 mA 140 ― 450
h
FE
(2) V
CE
= −5 V, I
C
= −100 mA 140 ― 400
Collector-emitter saturation voltage V
CE(sat)
I
C
= −100 mA, I
B
= −10 mA ― −0.4 −1.0 V
Base-emitter saturation voltage V
BE(sat)
I
C
= −100 mA, I
B
= −10 mA ― −0.76 −0.9 V
Transition frequency f
T
V
CE
= −5 V, I
C
= −50 mA ― 35 ― MH
Z
Collector output capacitance C
ob
V
CB
= −10 V, I
E
= 0, f = 1 MHz ― 18 ― pF
Switching time
Turn-on time t
on
See Figure 3
I
B1
= 10 mA, I
B2
= 20 mA,
Duty cycle ≤ 1%
― 0.2 ―
μs Storage time t
stg
― 2.3 ―
Fall time t
f
― 0.2 ―
Figure 3. Switching Time Test Circuit
Week of manufacture
(01 for first week of calendar year ; sequential number up to 52 or 53)
Year of manufacture
(Last digit of calendar year)
1
2
3
4
8
7
6
5
*
8604
8
7
6
5
1
2
3
4
Part No.
(or abbreviation code)
Lot No.
I
B1
20 µs
V
CC
Output
R
L
I
B2
I
B1
Input
I
B2