CHA6652-98F
Ref. : DSCHA66528215 - 03 Aug 18
1/14
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
21-27.5GHz Power Amplifier
GaAs Monolithic Microwave IC bare die
Description
The CHA6652-98F is a three stage
monolithic GaAs High Power Amplifier circuit
producing 2W output power. It integrates
differential mode power detector at the
output. Gain control up to 15dB is achievable
thanks to gate voltage.
It is a field proven solution for Point to Point
telecommunication systems. The circuit is
highly linear and compatible with the last
generation of Digital Pre-Distortion. Its
versatile biasing condition helps to tune the
performances.
The circuit is manufactured with an internal
pHEMT space evaluated process, 0.15µm
gate length.
Main Features
■ Broadband performances: 21-27.5GHz
■ 33dBm saturated power
■ 39dBm OIP3
■ 22.5dB gain
■ Gain control up to 15dB
■ DC bias: Vd = 6.0Volt @ Id=1.3A
■ Chip size 3.46x3.61x0.07 mm
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Min
Typ
Max
Unit
Freq
Frequency range
21
27.5
GHz
Gain
(1)
Linear Gain
22.5
dB
Psat
Saturated output power
33
dBm
OIP3
Output IP3
39
dBm
(1) These values are representative of on-wafer measurements (pulsed mode) that are made without bonding
wires at the RF ports.
RFOUT
REF
RFIN
Vg1 Vd1 Vg2 Vd2 Vg3 Vd3 DET
Vg1 Vd1 Vg2 Vd2 Vg3 Vd3
CHA6652-98F
21-27.5GHz Power Amplifier
Ref. : DSCHA66528215 - 03 Aug 18
2/14
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
Electrical Characteristics
Tamb.= +25°C, Vd = +6.0V
Symbol
Parameter
Min
Typ
Max
Unit
Fop
Operating frequency range
21
27.5
GHz
Gain
(1)
Small Signal Gain in 21 - 24GHz
Small Signal Gain in 24.25 - 27.5GHz
23.5
22.5
dB
ΔG
Gain variation in temperature
± 0.03
dB/°C
Psat
Saturated Output Power in 21 - 24GHz
Saturated Output Power in 24.25 - 27.5GHz
34.5
33
dBm
OIP3
Output IP3
39
dBm
PAE
PAE at saturation in 21 - 24GHz
PAE at saturation in 24.25 - 27.5GHz
25
18
%
CG
Gain control range
15
dB
NF
Noise figure
4.5
dB
Rlin
(1)
Input Return Loss
16.5
dB
Rlout
(1)
Output Return Loss
23
dB
Dr
Detection dynamic range (for output power
detection up to Psat)
30
dB
Vdetect
Voltage detection V
REF
- V
DET
up to Psat
10 to
1500
mV
Vg
DC gate Voltage
-0.65
V
Idq
Total drain current
1.3
A
(1)
These values are representative of on-wafer measurements (pulsed mode) that are made without bonding
wires at the RF ports.