10-PG07N3A050S5-M896F96T
datasheet
05 Jun. 2019 / Revision 1 1 Copyright Vincotech
Maximum Ratings
T
j = 25 °C, unless otherwise specified
Parameter Symbol Condition Value Unit
flow3xNPC 1
1200 V / 50 A
Features flow 1 12 mm housing
● Four quadrant operation
● Enhanced thermal performance
● Fast switching IGBTs
Schematic
Target applications
● Solar Inverters
Types
● 10-PG07N3A050S5-M896F96T
Buck Switch
Collector-emitter voltage
V
CES
650 V
Collector current
I
C
T
j
= T
jmax
T
s
= 80 °C
53 A
Repetitive peak collector current
I
CRM
t
p
limited by T
jmax
150 A
Total power dissipation
P
tot
T
j
= T
jmax
T
s
= 80 °C
80 W
Gate-emitter voltage
V
GES
±20 V
Maximum junction temperature
T
jmax
175 °C
10-PG07N3A050S5-M896F96T
datasheet
05 Jun. 2019 / Revision 1 2 Copyright Vincotech
Maximum Ratings
T
j = 25 °C, unless otherwise specified
Parameter Symbol Condition Value Unit
Buck Diode
Peak repetitive reverse voltage
V
RRM
650 V
Continuous (direct) forward current
I
F
T
j
= T
jmax
T
s
= 80 °C
51 A
Repetitive peak forward current
I
FRM
100 A
Total power dissipation
P
tot
T
j
= T
jmax
T
s
= 80 °C
71 W
Maximum junction temperature
T
jmax
175 °C
Boost Switch
Collector-emitter voltage
V
CES
650 V
Collector current
I
C
T
j
= T
jmax
T
s
= 80 °C
53 A
Repetitive peak collector current
I
CRM
t
p
limited by T
jmax
150 A
Total power dissipation
P
tot
T
j
= T
jmax
T
s
= 80 °C
80 W
Gate-emitter voltage
V
GES
±20 V
Maximum junction temperature
T
jmax
175 °C
Boost Diode
Peak repetitive reverse voltage
V
RRM
650 V
Continuous (direct) forward current
I
F
T
j
= T
jmax
T
s
= 80 °C
51 A
Repetitive peak forward current
I
FRM
100 A
Total power dissipation
P
tot
T
j
= T
jmax
T
s
= 80 °C
71 W
Maximum junction temperature
T
jmax
175 °C
Boost Sw.Inv.Diode
Peak repetitive reverse voltage
V
RRM
650 V
Continuous (direct) forward current
I
F
T
j
= T
jmax
T
s
= 80 °C
51 A
Repetitive peak forward current
I
FRM
100 A
Total power dissipation
P
tot
T
j
= T
jmax
T
s
= 80 °C
71 W
Maximum junction temperature
T
jmax
175 °C