1
Total Ionizing Dose Test Report
October 10
th
, 2017
Nadia Rezzak, J.J. Wang, Alex Cai, Ang Nan Gu, Kevin Chou
Table of Contents
I. Summary Table.........................................................................................................................2
II. Total Ionizing Dose (TID) Testing………................................................................................2
A. Device-Under-Test (DUT) and Irradiation Parameters .....................................................2
B. Test Method…...................................................................................................................3
C. Design and Parametric Measurements.............................................................................3
III. Test Results…………..............................................................................................................4
A. Functionality.......................................................................................................................4
B. Power Supply Current……................................................................................................4
C. Single-Ended Input Logic Threshold (VIL/VIH)................................................................13
D. Output-Drive Voltage (VOL/VOH)....................................................................................14
E. Propagation Delay...........................................................................................................19
F. Transition Time ...............................................................................................................19
2
I. SUMMARY TABLE
Parameter
Tolerance
1. Gross Functionality
Passed 125 krad(SiO
2
)
2. Power Supply Current
Passed 125 krad(SiO
2
)
3. Input Threshold (VIL/VIH)
Passed 125 krad(SiO
2
)
4. Output Drive (VOL/VOH)
Passed 125 krad(SiO
2
)
5. Propagation Delay
Passed 125 krad(SiO
2
) for 10% degradation
criterion
6. Transition Time
Passed 125 krad(SiO
2
)
II. TOTAL IONIZING DOSE (TID) TESTING
This testing is designed on the basis of an extensive database of TID testing for Radiation-
Tolerant FPGAs including flash-based FPGAs. Microsemi TID reports can be found at
http://www.microsemi.com/products/fpga-soc/radtolerant-fpgas/military-aerospace-radiation-
reliability-data#tid-reports
Electrical parameters are measured pre-irradiation and post-irradiation using the burn in
design and the Automatic Test Equipment (ATE) program. The report summarizes sample pins.
A. Device-Under-Test (DUT) and Irradiation Parameters
Table 1 lists the DUT and irradiation parameters.
Table. 1. DUT and Irradiation Parameters
Part Number
RT4G150
Package
LG1657
Foundry
United Microelectronics Corp.
Technology
65 nm
DUT Design
Burn in design with inverter string
Die Lot Number
KWMTM
Quantity Tested
6
Serial Number (Dose)
1658 (125 krad), 1690 (125 krad), 1703 (125
krad), 1744 (125 krad), 1786 (125 krad), 1793
(125 krad)
Radiation Facility
Defense Microelectronics Activity
Radiation Source
Co-60
Dose Rate
5 krad (SiO
2
)/min
Irradiation Temperature
Room
Irradiation and Measurement Bias
Static at 1.2V/2.5V/3.3V/3.3V
IO Configuration
Single ended Differential Pair