Central
Semiconductor Corp.
TM
PROCESS CPD92
Schottky Diode
High Voltage Schottky Diode Chip
PRINCIP
AL DEVICE TYPES
CMDD6263
CMKD6263
CMOD6263
CMPD6263 SERIES
CMSD6263 SERIES
1N6263
GEOMETRY
PROCESS DETAILS
BACKSIDE CATHODE
R1 (1-August 2002)
Process EPITAXIAL PLANAR
Die Size 9.0 x 9.0 MILS
Die Thickness 7.9 MILS
Anode Bonding Pad Area 4.8 MILS DIAMETER
Top Side Metalization Al - 30,000Å
Back Side Metalization Au - 18,000Å
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
GROSS DIE PER 4 INCH W
AFER
139,050
