Product Overview
FQP50N06L: Power MOSFET, N-Channel, Logic Level, QFET
®
, 60 V, 52.4 A, 21
mΩ , TO-220
For complete documentation, see the data sheet.
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and
DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide
superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies,
audio amplifier, DC motor control, and variable switching power applications.
Features
• 52.4A, 60V, RDS(on) = 21mΩ (Max.) @VGS = 10 V, ID = 26.2A
• Low gate charge ( Typ. 24.5nC)
• Low Crss ( Typ. 90pF)
• 100% avalanche tested
• 175°C maximum junction temperature rating
Applications
• Other Audio & Video
Part Electrical Specifications
Product Compliance Status Chan
nel
Polari
ty
Confi
gurati
on
V
(BR)D
SS
Min
(V)
V
GS
Max
(V)
V
GS(th)
Max
(V)
I
D
Max
(A)
P
D
Max
(W)
R
DS(on
)
Max
@
V
GS
=
2.5 V
(mΩ)
R
DS(on
)
Max
@
V
GS
=
4.5 V
(mΩ)
R
DS(on
)
Max
@
V
GS
=
10 V
(mΩ)
Q
g
Typ
@
V
GS
=
4.5 V
(nC)
Q
g
Typ
@
V
GS
=
10 V
(nC)
C
iss
Typ
(pF)
Pack
age
Type
FQP50N06L Pb-free Active N-
Chan
nel
Singl
e
60 ±20 2.5 52.4 121 - 25 21 - 24.5 1250 TO-
220-3
For more information please contact your local sales support at www.onsemi.com.
Created on: 8/10/2019