RN4988AFS
2007-11-01
1
TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type
(PCT Process) (Transistor with Built-in Bias Resistor)
RN4988AFS
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
• Two devices are incorporated into a fine-pitch, small-mold (6-pin)
package.
• Incorporating a bias resistor into the transistor reduces the number of
parts, so enabling the manufacture of ever more compact equipment and
lowering assembly cost.
Equivalent Circuit and Bias Resistor Values
Q1 Q2
R1: 22 kΩ
R2: 47 kΩ
(Q1, Q2 common)
Equivalent Circuit
(top view)
Marking
Unit: mm
fS6
0.15±0.05
0.1±0.05
6
0.8±0.05
1.0±0.05
0.7±0.05
1
2
0.1±0.05
0.350.35
3
1.0±0.05
0.1±0.05
5
4
0.48
+0.02
-0.04
1. EMITTER1
2. BASE1
3. COLLECTOR2
4. EMITTER2
5. BASE2
6. COLLECTOR1
(E1)
(B1)
(C2)
(E2)
(B2)
(C1)
JEDEC ―
JEITA ―
TOSHIBA 2-1F1D
Weight: 0.001 g (typ.)
R1
R2
B
C
E
R1
R2
B
C
E
6 54
1 2 3
Q1
Q2
Type name
V7
RN4988AFS
2007-11-01
2
Absolute Maximum Ratings
(Ta = 25°C) (Q1)
Characteristic Symbol Rating Unit
Collector-base voltage V
CBO
50 V
Collector-emitter voltage V
CEO
50 V
Emitter-base voltage V
EBO
7 V
Collector current I
C
80 mA
Absolute Maximum Ratings
(Ta = 25°C) (Q2)
Characteristic Symbol Rating Unit
Collector-base voltage V
CBO
−50 V
Collector-emitter voltage V
CEO
−50 V
Emitter-base voltage V
EBO
−7 V
Collector current I
C
−80 mA
Absolute Maximum Ratings
(Ta = 25°C) (Q1, Q2 common)
Characteristic Symbol Rating Unit
Collector power dissipation P
C
(Note 1) 50 mW
Junction temperature T
j
150 °C
Storage temperature range T
stg
−55~150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating