TPCP8601
2013-11-01
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
TPCP8601
High-Speed Switching Applications
DC-DC Converter Applications
Strobo Flash Applications
• High DC current gain: h
FE
= 200 to 500 (I
C
= −0.6 A)
• Low collector-emitter saturation: V
CE (sat)
= −0.19 V (max)
• High-speed switching: t
f
= 35 ns (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic Symbol Rating Unit
Collector-base voltage V
CBO
−20 V
Collector-emitter voltage V
CEO
−20 V
Emitter-base voltage V
EBO
−7 V
DC (Note 1) I
C
−4.0
Collector current
Pulse (Note 1 ) I
CP
−7.0
A
Base current I
B
−0.5 A
t = 10s 3.3
Collector power
dissipation (t = 10s)
DC
Pc (Note 2)
1.3
W
Junction temperature T
j
150 °C
Storage temperature range T
stg
−55 to 150 °C
Note 1: Ensure that the junction temperature does not exceed 150°C during
use of this device.
Note 2: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm
2
)
Note 3: ● on the lower left of the marking indicates Pin 1.
* Weekly code (three digits):
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-3V1A
Weight: 0.017 g (typ.)
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(lowest-order digit of the calendar year)
Figure 1.
Circuit Configuration
(Top View)
Figure 2. Marking
(Note 3)
0.33±0.05
0.28
+0.1
-0.11
1.12
+0.13
-0.12
2.4±0.1
0.475
0.65
2.8±0.1
A
0.05
M
2.9±0.1
41
5
8
0.8±0.05
0.17±0.02
B
B
0.05
M
A
S
0.025
S
1.12
+0.13
-0.12
0.28
+0.1
-0.11
1.Collector
2.Collector
3.Collector
4.Base
5.Emitter
6.Collector
7.Collector
8.Collector
Type
Lot No. (weekly code)
8 7 6 5
*
8601
1 2 3 4
1 2 3 4
8 7 6 5
Start of commercial production
2004-06
TPCP8601
2013-11-01
2
Electrical Characteristics
(Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Collector cut-off current I
CBO
V
CB
= −20 V, I
E
= 0 ⎯ ⎯ −100 nA
Emitter cut-off current I
EBO
V
EB
= −7 V, I
C
= 0 ⎯ ⎯ −100 nA
Collector-base breakdown voltage V
(BR) CBO
I
C
= −1 mA, I
B
= 0 −20 ⎯ ⎯ V
Collector-emitter breakdown voltage V
(BR) CEO
I
C
= −10 mA, I
B
= 0 −20 ⎯ ⎯ V
h
FE
(1)
V
CE
= −2 V, I
C
= −0.6 A 200 ⎯ 500
DC current gain
h
FE
(2)
V
CE
= −2 V, I
C
= −2.0 A 100 ⎯ ⎯
Collector-emitter saturation voltage V
CE (sat)
I
C
= −2 A, I
B
= −67 mA ⎯ ⎯ −0.19 V
Base-emitter saturation voltage V
BE (sat)
I
C
= −2 A, I
B
= −67 mA ⎯ ⎯ −1.1 V
Rise time t
r
⎯ 72 ⎯
Storage time t
stg
⎯ 170 ⎯
Switching time
Fall time t
f
See Figure 3 circuit diagram
V
CC
∼
−
12 V, R
L
= 6 Ω
I
B1
= −I
B2
= −67 mA
⎯ 35 ⎯
ns
Figure 3. Switching Time Test Circuit & Timing Chart
Duty cycle ＜1%
I
B1
20μs
I
B2
I
B1
I
B2
Input
Output
RL
VCC