TLP785,TLP785F
1 2019-03-11
© 2019
Toshiba Electronic Devices & Storage Corporation
1
2
3
4
1 : Anode
2 : Cathode
3 : Emitter
4 : Collector
TOSHIBA Photocoupler IRED & Photo−Transistor
TLP785, TLP785F
Office Equipment
Home Electric Appliances
Solid-State Relays
Switching Power Supplies
Contactless Controller Outputs
Simplex/Multiplex Data Transmission
The TOSHIBA TLP785 consists of a silicone phototransistor optically
coupled to an infrared emitting diode in a four lead plastic DIP (DIP4) with
having high isolation voltage
(AC: 5000 Vrms
(min)).
TLP785F is a lead forming type for the long creepage surface mounting
of TLP785.
• TLP785: 7.62 mm pitch type DIP4
• TLP785F: 10.16 mm pitch type DIP4
• Collector-emitter voltage: 80 V (min)
• Current transfer ratio: 50% (min)
Rank GB: 100% (min)
• Isolation voltage: 5000 V
rms
(min)
• UL-recognized : UL 1577, File No.E67349
• cUL-recognized :CSA Component Acceptance Service No.5A
File No.E67349
• VDE-approved : EN 60747-5-5 (Note 1)
• CQC-approved: GB4943.1, GB8898 China Factory
• SEMKO-approved : EN 62368-1
Note 1 : When a VDE approved type is needed,
please designate the Option(D4).
• Construction mechanical rating
7.62 mm Pitch
Standard Type
10.16 mm Pitch
TLPxxxF Type
Creepage distance 7.0 mm (min) 8.0 mm (min)
Clearance 7.0 mm (min) 8.0 mm (min)
Insulation thickness 0.4 mm (min) 0.4 mm (min)
Inner creepage distance 4.0 mm (min) 4.0 mm (min)
Unit:
TOSHIBA
11-5L1
Unit:
TOSHIBA
11-5L102
TLP785
TLP785F
Pin Configurations (top view)
Start of commercial production
2010-11
TLP785,TLP785F
2 2019-03-11
© 2019
Toshiba Electronic Devices & Storage Corporation
Current Transfer Ratio (Note)
Type
Classification
(Note 1)
Current Transfer Ratio (%)
(I
C
/ I
F
)
Marking of Classification
I
F
= 5mA, V
CE
= 5V, Ta = 25°C
Min
Max
TLP785
None 50 600 Blank
Rank Y 50 150 YE
Rank GR 100 300 GR
Rank BL 200 600 BL
Rank GB 100 600 GB
Rank YH 75 150 Y+
Rank GRL 100 200 G
Rank GRH 150 300 G+
Rank BLL 200 400 B
Note 1: e.g. rank GB: TLP785 (GB)
Note: Application type name for certification test, please use standard product type name, e.g.
TLP785 (GB): TLP785
Absolute Maximum Ratings (Note) (Ta = 25°C)
Characteristics Symbol Rating Unit
LED
Forward current I
F
60 mA
Forward current derating (Ta ≥ 39°C) ΔI
F
/ °C −0.7 mA / °C
Pulse forward current (Note 2) I
FP
1 A
Power dissipation P
D
90 mW
Power dissipation derating (Ta ≥ 39°C) ΔP
D
/ °C −0.9 mW / °C
Reverse voltage V
R
5 V
Junction temperature T
j
125 °C
Detector
Collector−emitter voltage V
CEO
80 V
Emitter−collector voltage V
ECO
7 V
Collector current I
C
50 mA
Power dissipation (single circuit) P
C
150 mW
Power dissipation derating
(Ta ≥ 25°C)
ΔP
C
/ °C −1.5 mW / °C
Junction temperature T
j
125 °C
Operating temperature range T
opr
−55 to 110 °C
Storage temperature range T
stg
−55 to 125 °C
Lead soldering temperature (10 s) T
sol
260 °C
Total package power dissipation P
T
240 mW
Total package power dissipation derating
(Ta ≥ 25°C)
ΔP
T
/ °C −2.4 mW / °C
Isolation voltage (Note 3) BV
S
5000
V
rms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 2: Pulse Width: 100 μs or less, 100 Hz frequency
Note 3: AC, 60 s., R.H. ≤ 60%. Apply voltage to LED pin and detector pin together.