Silicon Epitaxial Planar Diode
BAV19WS/BAV20WS/BAV21WS
FEATURES
Pb
z Fast Switching Speed
Lead-free
z Surface Mount Package Ideally Suited For
Automatic Insertion
z For General Purpose Switching Applications
z High Conductance
APPLICATIONS
SOD-323
z Surface mount fast switching diode
ORDERING INFORMATION
Type No. Marking Package Code
BAV19WS A8 SOD-323
BAV20WS T2 SOD-323
BAV21WS T3 SOD-323
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Characteristic Symbol BAV19WS BAV20WS BAV21WS Unit
Repetitive Peak Reverse Voltage V
RRM
120 200 250 V
Working Peak Reverse Voltage
DC Reverse Voltage
V
RWM
V
R
100 150 200 V
RMS Reverse Voltage V
R(RMS)
71 106 141 V
Average Rectified Output Current I
o
200 mA
Non-Repetitive Peak Forward Surge Current
@t=1.0 μs
@t=1.0 s
I
FSM
2.5
0.5
Repetitive Peak Forward Surge Current I
FRM
625 mA
Power Dissipation P
d
200 mW
Thermal Resistance Junction to Ambient Air R
θJA
625 ℃/W
Operating and Storage Temperature Rage T
j
,T
STG
-65 to +150 ℃
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
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Silicon Epitaxial Planar Diode
BAV19WS/BAV20WS/BAV21WS
Characteristic Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage
BAV19WS
BAV20WS
BAV21WS
V
(BR)R
120
200
250
V I
R
=100uA
Forward Voltage V
FM
- 1.0
1.25
V I
F
=100mA
I
F
=200mA
Reverse Current BAV19WS
BAV20WS
BAV21WS
I
R
- 0.1
0.1
0.1
μA V
R
=100V
V
R
=150V
V
R
=200V
Capacitance between
terminals
C
T
- 5 pF V
R
=0,f=1.0MHz
Reverse Recovery Time t
rr
- 50 ns I
F
=I
R
=30mA,
I
rr
=0.1×I
R
,R
L
=100Ω
TYPICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
２０１４－０３ ０１版
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