PNP SILICON PLANAR EPITAXIAL SWITCHING TRANSISTORS
2N3905 / 2N3906
TO-92
Plastic Package
General Purpose Switching And Amplifier Applications
ABSOLUTE MAXIMUM RATINGS (T
a
=25ºC)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
V
CEO
Collector Base Voltage
V
CBO
Emitter Base Voltage
V
EBO
Collector Current Continuous
I
C
Power Dissipation T
a
=25ºC
P
D
Derate Above 25ºC
Power Dissipation T
a
=60ºC
P
D
Power Dissipation T
c
=25ºC
P
D
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
T
j
, T
stg
THERMAL RESISTANCE
Junction to Case
R
th (j-c)
Junction to Ambient in free air
Rth
(j-a)
ELECTRICAL CHARACTERISTICS (T
a
=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION 2N3905
Collector Emitter Voltage
V
CEO
I
C
=1mA, I
B
=0
>40
Collector Base Voltage
V
CBO
I
C
=10
µ
A. I
E
=0
>40
Emitter Base Voltage
V
EBO
I
E
=10
µ
A, I
C
=0
>5.0
>5.0
Collector Cut Off Current
I
CEX
V
CE
=30V, V
EB
=3V
< 50
< 50
Base Cut Off Current
I
BL
V
CE
=30V, V
EB
=3V
< 50
< 50
DC Current Gain
*h
FE
I
C
=0.1mA, V
CE
=1V
>30
>60
I
C
=1mA, V
CE
=1V
>40
>80
I
C
=10mA, V
CE
=1V
50-150
100-300
I
C
=50mA, V
CE
=1V
>30
>60
I
C
=100mA, V
CE
=1V
>15
>30
Collector Emitter Saturation Voltage
*V
CE (sat)
I
C
=10mA, I
B
=1mA
< 0.25
< 0.25
I
C
=50mA, I
B
=5mA
< 0.40
< 0.40
Base Emitter Saturation Voltage
*V
BE (sat)
I
C
=10mA, I
B
=1mA
0.65 - 0.85
I
C
=50mA, I
B
=5mA
< 0.95
< 0.95
*Pulse Condition: =300µµs, Duty Cycle=2%
2N3905_3906Rev_1 071105E
250 mW
5.0
200
625
1.5
5.0
2N3906
83.3
200
For Lead Free Parts, Device
Part # will be Prefixed with
"T"
VALUE
40
40
UNITS
V
V
12
-55 to +150
V
V
0.65 - 0.85
>40
>40
mW/ºC
ºC
ºC/W
ºC/W
V
V
nA
nA
V
W
V
mA
mW
mW/ºC
UNITS
V
V
E
B
C
Continental Device India Limited
Data Sheet Page 1 of 5
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR EPITAXIAL SWITCHING TRANSISTORS
2N3905 / 2N3906
TO-92
Plastic Package
ELECTRICAL CHARACTERISTICS (T
a
=25ºC unless specified otherwise)
SMALL SIGNAL CHARACTERISTICS
DESCRIPTION
SYMBOL
TEST CONDITION 2N3905
Transistors Frequency
f
T
I
C
=10mA, V
CE
=20V, f=100MHz
>200
Output Capacitance
C
ob
V
CB
=5V, I
E
=0, f=100KHz
< 4.5
Input Capacitance
C
ib
V
EB
=0.5V, I
C
=0, f=100KHz
<10
ALL f=1kHz
Small Signal Current Gain
h
fe
I
C
=1mA, V
CE
=10V
50 - 200
Input Inpedence
h
ie
I
C
=1mA, V
CE
=10V
0.5 - 8.0
Out put Adimttance
h
oe
I
C
=1mA, V
CE
=10V
1.0 - 40
Voltage Feedback Ratio h
re
I
C
=1mA, V
CE
=10V
0.1 - 5.0
Noise Figure NF
I
C
=100µA, V
CE
=5V, f=10Hz to
15.7 KHz, R
S
=1KΩ
< 5.0
SWITCHING Time
Delay time
t
d
V
CC
=3V, V
BE
=0.5V
< 35
Rise time
t
r
I
C
=10mA, I
B1
=1mA
< 35
Storage time
t
s
V
CC
=3V, I
C
=10mA
< 200
Fall time
t
f
I
B
1=1
B2
=1mA
< 60
2N3905_3906Rev_1 071105E
For Lead Free Parts, Device
Part # will be Prefixed with
"T"
2N3906
>250
UNITS
MHz
100 - 400
2.0 -12
3.0 - 60
0.1 - 10
< 4.0
< 225
< 75
< 35
< 35
<4.5
<10
pF
ns
pF
µ
mhos
k
Ω
x10
-4
dB
ns
ns
ns
E
B
C
Continental Device India Limited
Data Sheet Page 2 of 5