Product Specification www.jmnic.com
Silicon PNP Power Transistors 2SA1075 2SA1076
DESCRIPTION
・With MT-200 package
・Complement to type 2SC2525,2SC2526
・Fast switching speed
・Excellent safe operating area
APPLICATIONS
・High frequency power amplifiers
・Audio power amplifiers
・Switching regulators
・DC-DC converters
PINNING(see Fig.2)
PIN DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3 Emitter
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
2SA1075 -120 V
V
CBO
Collector-base voltage
2SA1076
Open emitter
-160 V
2SA1075 -120 V
V
CEO
Collector-emitter voltage
2SA1076
Open base
-160 V
V
EBO
Emitter-base voltage Open collector -7 V
I
C
Collector current -12 A
P
C
Collector power dissipation
T
C
=25℃
120 W
T
j
Junction temperature 150
℃
T
stg
Storage temperature -65~150
℃
JM
nic
Product Specification www.jmnic.com
JMnic
Silicon PNP Power Transistors 2SA1075 2SA1076
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
2SA1075 -120
V
(BR)CEO
Collector-emitter
breakdown voltage
2SA1076
I
C
=-1mA ;R
BE
=∞
-160
V
2SA1075 -120
V
(BR)CBO
Collector-base
breakdown voltage
2SA1076
I
C
=-50μA; I
E
=0
-160
V
V
(BR)EBO
Emitter-base breakdown voltage I
E
=-50μA; I
C
=0 -7 V
V
CEsat
Collector-emitter saturation voltage I
C
=-5A;I
B
=-0.5A -1.8 V
V
BE
Base-emitter voltage I
C
=-5A;V
CE
=-5V -1.7 V
2SA1075 V
CB
=-120V; I
E
=0
I
CBO
Collector cut-off current
2SA1076 V
CB
=-160V; I
E
=0
-50 μA
2SA1075 V
CE
=-120V; I
B
=0
I
CEO
Collector cut-off current
2SA1076 V
CE
=-160V; I
B
=0
-1 mA
I
EBO
Emitter cut-off current V
EB
=-7V; I
C
=0 -50 μA
h
FE-1
DC current gain I
C
=-1A ; V
CE
=-5V 60 200
h
FE-2
DC current gain I
C
=-7A ; V
CE
=-5V 40
C
ob
Output capacitance I
E
=0 ; V
CB
=-10V 300 pF
f
T
Transition frequency I
C
=-1A ; V
CE
=-10V 45 MHz
Switching times
t
r
Rise time -0.15 μs
t
s
Storage time -0.50 μs
t
f
Fall time
I
C
=- 7.5A;R
L
=4Ω
I
B1
=- I
B2
=-0.75A
-0.11 μs