JMnic Product Specification
Silicon PNP Power Transistors 2SA1072 2SA1073
DESCRIPTION
・With TO-3 package
・Complement to type 2SC2522/2523
・Excellent safe operating area
・Fast switching speed
APPLICATIONS
・High frequency power amplifier
・Audio power amplifiers
・Switching regulators
・DC-DC converters
PINNING(see Fig.2)
PIN DESCRIPTION
1
Base
2 Emitter
3 Collector
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
2SA1072 -120
V
CBO
Collector-base voltage
2SA1073
Open emitter
-160
V
2SA1072 -120
V
CEO
Collector-emitter voltage
2SA1073
Open base
-160
V
V
EBO
Emitter-base voltage Open collector -7 V
I
C
Collector current -12 A
P
C
Collector power dissipation
T
C
=25℃
120 W
T
j
Junction temperature 150
℃
T
stg
Storage temperature -65~150
℃
Fig.1 simplified outline (TO-3) and symbol
JMnic Product Specification
2
Silicon PNP Power Transistors 2SA1072 2SA1073
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
2SA1072 -120
V
(BR)CEO
Collector-emitter
breakdown voltage
2SA1073
I
C
=-1mA ;R
BE
=∞
-160
V
2SA1072 -120
V
(BR)CBO
Collector-base
breakdown voltage
2SA1073
I
C
=-50μA ;I
E
=0
-160
V
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=-50μA ;I
C
=0
-7 V
V
CEsat
Collector-emitter saturation voltage I
C
=-5A ;I
B
=-0.5A -0.9 -1.8 V
V
BE
Base-emitter on voltage I
C
=-5A ; V
CE
=-5V -1.25 -1.7 V
2SA1072 V
CB
=-120V; I
E
=0
I
CBO
Collector
cut-off current
2SA1073 V
CB
=-160V; I
E
=0
-50 μA
2SA1072
V
CE
=-120V; R
BE
=∞
I
CEO
Collector
cut-off current
2SA1073
V
CE
=-160V; R
BE
=∞
-1 mA
I
EBO
Emitter cut-off current V
EB
=-7V; I
C
=0 -50
μA
h
FE-1
DC current gain I
C
=-1A ; V
CE
=-5V 60 200
h
FE-2
DC current gain I
C
=-7A ; V
CE
=-5V 40
C
OB
Output capacitance I
E
=0 ; V
CB
=-10V;f=1MHz 300 pF
f
T
Transition frequency I
C
=-1A ; V
CE
=-10V;f=10MHz 60 MHz
Switching times
t
r
Rise time 0.15
μs
t
stg
Storage time 0.50
μs
t
f
Fall time
I
C
=-7.5A
I
B1
=-I
B2
=-0.75A;R
L
=4Ω
0.11
μs