1
Features
Mechanical data
Maximum ratings and electrical characteristics
O
Rating at 25 C ambient temperature unless otherwise specified.
Outline
Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead free in compliance with EU RoHS.
B140WG-SL THRU B1200WG-SL
1A Surface Mount Schottky Barrier Rectifiers
I
O
I
FS M
I
R
T
ST G
Forward Rectified Output Current
Forward Surge Current
Peak Reverse Current @ 25 C
Storage temperature Range
Parameter
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
40V,60V
100V,150V,200V
Conditions Symbol MIN. TYP. MAX. UNIT
-50 +150
0.05
0.1
1.0
25
A
A
mA
O
C
Epoxy:UL94-V0 rated flame retardant
Case : Molded plastic, SOD-123SL
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity : Indicated by cathode band
Weight : Approximated 0.018 gram
Operating temperature
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T ( C)
J
Max. forward voltage
O
@1A, T = 25 C
A
V (V)
F
0.55
Max. DC
blocking voltage
V (V)
R
Max.
RMS voltage
V (V)
RM S
28
Max.
repetitive peak
reverse voltage
V (V)
RR M
40B140WG-SL
Symbol
40
Document ID : DS-22K020
Revised Date : 2016/12
Revision : C1
Dimensions in inches and (millimeters)
SOD-123SL
0.150(3.80)
0.134(3.40)
0.079(2.0)
0.059(1.5)
0.008(0.20)
0.004(0.10)
0.032(0.8)
0.051(1.3)
Marking code
0.037(0.95)
0.022(0.55)
0.043(1.10)
0.033(0.85)
-50 ~ +150
0.704260 60
0.8570100 100
B160WG-SL
B1100WG-SL
5
10
At Rated DC Blocking Voltage @ 100 C
o
o
40V,60V
100V,150V,200V
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R
Chip Integration Technology Corporation
0.92
140200 200B1200WG-SL
105150 150B1150WG-SL
2
Rating and characteristic curves
FIG. 3-MAXIMUM NON-REPETITIVE PEAK FORWARD
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150 175
SURGE CURRENT
FIG. 1- FORWARD CURRENT DERATING CURVE
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
0 20 40 60 80 100
100
10
1
0.1
0.01
0.001
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
30
25
20
15
10
5.0
0
1 10 100
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
AVERAGE FORWARD CURRENT (A)
1.0
PEAK FORWARD SURGE CURRENT (A)
NUMBER OF CYCLES AT 60 Hz
INSTANTANEOUS REVERSE CURRENT (mA)
PERCENT OF RATED PEAK REVERSE VOLYAGE(%)
TA=100 C
TA=75 C
T =25 C
A
FIG. 2-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
0.2 0.4 0.6 0.8 1.0 1.1
0.01
0.1
1
20
10
T =25 C
PULSE WIDTH=300 us
1%DUTY CYCLE
B140WG-SL
INSTANTANEOUS FORWARD CURRENT,(A)
FORWARD VOLTAGE (V)
A
, INSTANTANEOUS
V
F
R
I
I
I
I
FSM
F
(A
V)
LEAD TEMPERATURE( C)
O
B160WG-SL
B1150WG-SL~B1200WG-SL
B1100WG-SL
B140WG-SL THRU B1200WG-SL
1A Surface Mount Schottky Barrier Rectifiers
Chip Integration Technology Corporation
Document ID : DS-22K020
Revised Date : 2016/12
Revision : C1