BSS123

Rev.F Apr.-2017 DATA SHEET

http://www.fsbrec.com 1 / 6

SOT-23 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a SOT-23 Plastic Package.

极低的 R

DS(ON)

为高密度电池设计。

High density cell design for extremely low R

DS(ON)

.

适用于作负载开关或脉宽调制应用。

This device is suitable for use as a load switch or in PWM applications.

内部等效电路 / Equivalent Circuit

PIN1：G PIN 2：S PIN 3：D

印章代码 / Marking

描述 / Descriptions

特征 / Features

用途 / Applications

引脚排列 / Pinning

Marking HSA

3

2

1

BSS123

Rev.F Apr.-2017 DATA SHEET

http://www.fsbrec.com 2 / 6

参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Drain-Source Voltage V

DSS

100 V

Drain Current – Continuous I

D

170 mA

Drain Current– Pulsed

I

D

(T

C

=25℃)

680 mA

Continuous Drain–Source I

S

170 mA

Gate-Source Voltage V

GS

±20 V

Power Dissipation P

D

0.36 W

Thermal Resistance, Junction-to-Ambient R

θJA

350

℃/W

Operating and Storage Junction Temperature

Range

T

J

, T

STG

-55 to 150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Drain–Source Breakdown Voltage BV

DSS

V

GS

=0V I

D

=250

μ

A

100 V

I

DSS(1)

V

DS

=100V

S

=0V 1.0 μA

I

DSS(2)

V

DS

=100V V

GS

=0V

T

j

=125℃

60 μA

Zero Gate Voltage Drain Current

I

DSS(3)

V

DS

=20V V

GS

=0V 10 nA

Gate–Body Leakage. I

GSS

V

GS

=±20 V

DS

=0V ±50 nA

On–State Drain Current I

D(on)

V

DS

=5.0V V

GS

=10V 0.68 A

Gate Threshold Voltage V

GS(th)

V

DS

=V

GS

I

D

=1.0mA 0.8 1.7 2.0 V

R

DS(on)(1)

V

GS

=10V I

D

=0.17A 1.2 6.0 Ω

R

DS(on)(2)

V

GS

=4.5V I

D

=0.17A 1.3 10 Ω

Static Drain–Source

On–Resistance

R

DS(on)(3)

V

GS

=10V I

D

=0.17A

T

j

=125℃

2.2 12 Ω

Forward Transconductance g

FS

V

DS

=10V I

D

=0.17A 0.08 0.8 S

Drain–Source Diode Forward

V

oltage

V

SD

V

GS

=0V I

S

=0.34A 0.8 1.3 V

Input Capacitance C

iss

73 pF

Output Capacitance C

oss

7 pF

Reverse Transfer Capacitance C

rss

V

DS

=25V V

GS

=0V

f=1.0MHz

3.4 pF

Turn–On Delay Time t

d(on)

1.7 3.4 ns

Turn–On Rise Time t

r

9 18 ns

Turn–Off Delay Time t

d(off)

17 31 ns

Turn–Off Fall Time t

f

I

D

=0.28A V

GS

=10V

V

DD

=30V R

G

=6.0Ω

2.4 5.0 ns

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)