BC517 — NPN Darlington Transistor
Publication Order Number:
BC517-D74Z/D
© 2005 Semiconductor Components Industries, LLC.
September-2017, Rev. 2
BC517
NPN Darlington Transistor
Features
• This device is designed for applications requiring extremely
high current gain at currents to 1.0 A.
• Sourced from process 05.
Ordering Information
Absolute Maximum Ratings
(1), (2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating co nd iti ons an d s tres si ng the parts to these levels i s n ot re co mme nde d. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low-
duty-cycle operations.
Part Number Top Mark Package Packing Method
BC517-D74Z BC517 TO-92 3L (Bent Lead) Ammo
Symbol Parameter Value Unit
V
CEO
Collector-Emitter Voltage 30 V
V
CBO
Collector-Base Voltage 40 V
V
EBO
Emitter-B ase Voltage 10 V
I
C
Collector Current - Continuous 1.2 A
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
1. Collector
1
2
3
1
2
3
Straight Lead Bent Lead
TO-92
Bulk Packing Tape & Reel
Ammo Packing
2. Base
3. Emitter
BC517 — NPN Darlington Transistor
www.onsemi.com
2
Thermal Characteristics
(3)
Valu es are at T
A
= 25°C unless otherwise noted.
Note:
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Valu es are at T
A
= 25°C unless otherwise noted.
Symbol Parameter Value Unit
P
D
Total Device Dissipation, T
A
= 25°C 625 mW
Derate Above 25°C 5.0 mW/°C
R
θJC
Thermal Resistance, Junction-to-Case 83.3 °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient 200 °C/W
Symbol Parameter Conditions Min. Typ. Max. Unit
V
CEO
Collector-Emitter Breakdown Voltage I
C
= 2.0 mA, I
B
= 0 30 V
V
CBO
Collector-Base Breakdown Voltage I
C
= 10 μA, I
E
= 0 40 V
V
EBO
Emitter-Base Breakdown Voltage I
E
= 100 nA, I
C
= 0 10 V
I
CBO
Collector Cut-Off Curren t V
CB
= 30 V, I
E
= 0 100 nA
h
FE
DC Current Gain V
CE
= 2 V, I
C
= 20 mA 30,000
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= 100 mA, I
B
= 0.1 mA 1 V
V
BE
(on) Base-Emitter On Voltage I
C
= 10 mA, V
CE
= 5.0 V 1.4 V